Charge Pumping Effect in CCD

鲍希茂; 柳承恩; 郑祥钦

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Charge Pumping Effect in CCD

更新时间：2025-12-08

- Charge Pumping Effect in CCD
- Acta Electronica Sinica Issue 2, Pages: 39-45(1980)
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- Published：1980
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[1]鲍希茂,,,,,,,,,柳承恩,,,,,,,,,郑祥钦.CCD中的电荷泵效应[J].电子学报,1980(02):39-45.

鲍希茂, 柳承恩, 郑祥钦. Charge Pumping Effect in CCD[J]. Acta Electronica Sinica, 1980, (2): 39-45.
[1]鲍希茂,,,,,,,,,柳承恩,,,,,,,,,郑祥钦.CCD中的电荷泵效应[J].电子学报,1980(02):39-45. DOI：

鲍希茂, 柳承恩, 郑祥钦. Charge Pumping Effect in CCD[J]. Acta Electronica Sinica, 1980, (2): 39-45. DOI：

摘要

本文提出了一种CCD（电荷耦合器件）中的电荷泵效应。这种效应会引起FDR（浮置扩散区）的电位漂移

并带来一种特殊的电荷转移损失。当有电荷泵效应存在时

浮置扩散放大器就不是非破坏性电压读出。电荷泵效应可以用完全复位转移的办法加以消除。由此对FDR的复位深度提出了一个限制。

Abstract

In this paper

a charge pumping effect in CCD with floating diffusion region is introduced

which will lead to a voltage shift and a special charge transfer loss. With such an effect

floating diffusion amplifier can not be taken as a nondestructive voltage sensor of a signal. The effect can be obviated provided that floating diffusion is reset to a critical voltage during charge transfer process.

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