A Study of Transistor RF Amplifier Bolcking

Ding Zhong-qi

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A Study of Transistor RF Amplifier Bolcking

更新时间：2025-12-08

- A Study of Transistor RF Amplifier Bolcking
- Acta Electronica Sinica Issue 1, Pages: 101-104(1981)
- 作者机构：
  
  湖南大学电气工程系
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- Published：1981
- 稿件说明：
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[1]丁钟琦.晶体管高频放大器阻塞现象的研究[J].电子学报,1981(01):101-104.

Ding Zhong-qi. A Study of Transistor RF Amplifier Bolcking[J]. Acta Electronica Sinica, 1981, (1): 101-104.
[1]丁钟琦.晶体管高频放大器阻塞现象的研究[J].电子学报,1981(01):101-104. DOI：

Ding Zhong-qi. A Study of Transistor RF Amplifier Bolcking[J]. Acta Electronica Sinica, 1981, (1): 101-104. DOI：

摘要

本文用双曲线函数法研究了晶体管高频放大器的阻塞问题

推导了有用输出与干扰的一般关系式

讨论了提高阻塞电平的方法。

Abstract

Transistor blocking is investigated using hyperbolic function. A general expression is obtained showing the effect of interference on the useful output and methods of raising the blocking level are discussed.

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A Study of Transistor RF Amplifier Bolcking

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