Base Doped Profile for Manufacture of Super Gain Device

Xu Jian-shi

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Base Doped Profile for Manufacture of Super Gain Device

更新时间：2025-12-08

- Base Doped Profile for Manufacture of Super Gain Device
- Acta Electronica Sinica Issue 3, Pages: 85-88(1980)
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- Published：1980
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[1]徐剑石.超增益器件制造中的基区杂质分布[J].电子学报,1980(03):85-88.

Xu Jian-shi. Base Doped Profile for Manufacture of Super Gain Device[J]. Acta Electronica Sinica, 1980, (3): 85-88.
[1]徐剑石.超增益器件制造中的基区杂质分布[J].电子学报,1980(03):85-88. DOI：

Xu Jian-shi. Base Doped Profile for Manufacture of Super Gain Device[J]. Acta Electronica Sinica, 1980, (3): 85-88. DOI：

摘要

适当控制基区的杂质分布

可以获得性能优越的超增益器件。我们据此进行批量生产的超增益器件

在I

=10μA

=6V条件下

NPN型的h

可大于2000

CEO

可大于30V;PNP型的h

可大于800

CEO

可大于20V。器件的I

CEO

可低于10pA。若与氮化硅-高温氮氢烘焙工艺相结合

将为高可靠、高精度线性集成电路提供工艺基础。

Abstract

The preferable performance of the super gain device can be acquired through adequately controlling base doped profile. By this method

these super gain devices were mass-produced. Under test condition for Ic = 10MμA

VCB = 6V

. for NPN type device hFE may be greater than 2000

BVCEO than 30V. For PNP type device

hFE May be greater than 800

BVcEO than 20V

ICEO smaller than l0pA.This technology combined with silicon nitride-high nitrogen hydrogen baking will make high reliability and high precision linear integrated circuits available.

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