A GaAs/GaAIAs PNPN NEGATIVE-RESISTANCE LASER WITH LOW THRESHOLD CURRENT

Wang Shouwu Wu Ronghan Zhu QigaoZhang Quansheng Li Zhaoyin Tian Huiliang

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A GaAs/GaAIAs PNPN NEGATIVE-RESISTANCE LASER WITH LOW THRESHOLD CURRENT

更新时间：2025-12-08

- A GaAs/GaAIAs PNPN NEGATIVE-RESISTANCE LASER WITH LOW THRESHOLD CURRENT
- Acta Electronica Sinica Issue 3, Pages: 35-43(1979)
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- Published：1979
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[1]王守武,,,,,,,,,,,吴荣汉,,,,,,,,,,,朱其高,,,,,,,,,,,张权生,,,,,,,,,,,李照银,,,,,,,,,,,田慧良.低阈值GaAs/GaAlAs PNPN负阻激光器[J].电子学报,1979(03):35-43.

Wang Shouwu Wu Ronghan Zhu QigaoZhang Quansheng Li Zhaoyin Tian Huiliang. A GaAs/GaAIAs PNPN NEGATIVE-RESISTANCE LASER WITH LOW THRESHOLD CURRENT[J]. Acta Electronica Sinica, 1979, (3): 35-43.
[1]王守武,,,,,,,,,,,吴荣汉,,,,,,,,,,,朱其高,,,,,,,,,,,张权生,,,,,,,,,,,李照银,,,,,,,,,,,田慧良.低阈值GaAs/GaAlAs PNPN负阻激光器[J].电子学报,1979(03):35-43. DOI：

Wang Shouwu Wu Ronghan Zhu QigaoZhang Quansheng Li Zhaoyin Tian Huiliang. A GaAs/GaAIAs PNPN NEGATIVE-RESISTANCE LASER WITH LOW THRESHOLD CURRENT[J]. Acta Electronica Sinica, 1979, (3): 35-43. DOI：

摘要

一种PNPN型异质结负阻激光器业已研制成功

它的具体结构是n·GaAs/N·Ga

1-x

As/p·GaAs/p·Ga

1-y

As/P·GaAs/n·GaAs/P·Ga

1-z

As;其中

x=0.2～0.3

y≤0.20

z=0.1。本文研究了这种激光器的工作原理和制备工艺

分析了存在异质结构时器件的电导通机理

测量了器件的某些电参数及激射特性。器件的转折电压V

为15～20V

维持电压V

约为1.5V

维持电流I

约为10～100mA。激射阈电流密度最低可达2500A/cm

。将激光器置于简单的张弛振荡线路中能够较容易地实现自振激射。

Abstract

A PNPN type negative-resistance laser has been obtained with the following heterojunction. structure.n·GaAs/N·Ga1-xAlxAs/p·GaAs/P·Ga1-yAly As/p·GaAs/n·GaAs/P·Ga1-z AlzAs where x=0.2-0.3

y≤0.20

z≈0.10. The operation mechanism and the process technology of this type of devices are discussed

The condition for "on" turning is analyzed and some electrical parameters and stimulated emission characteristics of the devices are measured. These devices have a turn-on voltage of about 15-20V

and the stand-on current is about 10

00mA

while the corresponding stand-on voltage is about 1.5V. The lowest threshold current density is about 2500A/cm2. Stimulated emission by self-oseillations may easily be realized when the device is connected in a simple relaxation circuit.

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