A STUDY OF VAPOR PHASE EPITAXIAL GROWTH OF GaAs AT LOW TEMPERATURE

彭瑞伍; 孙裳珠; 沈松华

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A STUDY OF VAPOR PHASE EPITAXIAL GROWTH OF GaAs AT LOW TEMPERATURE

更新时间：2025-12-08

- A STUDY OF VAPOR PHASE EPITAXIAL GROWTH OF GaAs AT LOW TEMPERATURE
- Acta Electronica Sinica Issue 1, Pages: 23-30(1978)
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- Published：1978
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[1]彭瑞伍,,,,,,,,,,,孙裳珠,,,,,,,,,,,沈松华.砷化镓低温气相外延的研究[J].电子学报,1978(01):23-30.

彭瑞伍, 孙裳珠, 沈松华. A STUDY OF VAPOR PHASE EPITAXIAL GROWTH OF GaAs AT LOW TEMPERATURE[J]. Acta Electronica Sinica, 1978, (1): 23-30.
[1]彭瑞伍,,,,,,,,,,,孙裳珠,,,,,,,,,,,沈松华.砷化镓低温气相外延的研究[J].电子学报,1978(01):23-30. DOI：

彭瑞伍, 孙裳珠, 沈松华. A STUDY OF VAPOR PHASE EPITAXIAL GROWTH OF GaAs AT LOW TEMPERATURE[J]. Acta Electronica Sinica, 1978, (1): 23-30. DOI：

摘要

本文研究了GaAs低温气相外延过程和评价了外延层的质量。对低温外延时的表面形貌

生长速率

剩余杂质浓度

电子迁移率

深能级杂质和纵向浓度分布进行了讨论

并与高温外延进行了比较。结果表明

低温外延是制备较高质量外延层的一种可取方法。

Abstract

A study of the low temperature epitaxy process for GaAs has been made together with evaluation of the quality of the epitaxial layers obtained. The surface morphology

growth rate

residual impurity level

electronic mobility deep impurity level and carrier concentration profile for low temperature epitaxy are discussed and compared with those for high temperature epitaxy. The results indicate that the low temperature epitaxy process is an acceptable method for the preparation of device quality GaAs layers.

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