CW Nd-YAG LASER ANNEALING OF ION IMPLANTED SILICON

邹世昌; B.I.Deutch; 柳襄怀; 陈朝荣; 林成鲁; 吴恒显; 陆世桢; 沈振东

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CW Nd-YAG LASER ANNEALING OF ION IMPLANTED SILICON

更新时间：2025-12-08

- CW Nd-YAG LASER ANNEALING OF ION IMPLANTED SILICON
- Acta Electronica Sinica Issue 4, Pages: 81-85(1979)
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- Published：1979
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[1]邹世昌,,,,,,,,,,,B.I.Deutch,,,,,,,,,,,柳襄怀,,,,,,,,,,,陈朝荣,,,,,,,,,,,林成鲁,,,,,,,,,,,吴恒显,,,,,,,,,,,陆世桢,,,,,,,,,,,沈振东.离子注入硅Nd-YAG连续激光退火[J].电子学报,1979(04):81-85.

邹世昌, B.I.Deutch, 柳襄怀, et al. CW Nd-YAG LASER ANNEALING OF ION IMPLANTED SILICON[J]. Acta Electronica Sinica, 1979, (4): 81-85.
[1]邹世昌,,,,,,,,,,,B.I.Deutch,,,,,,,,,,,柳襄怀,,,,,,,,,,,陈朝荣,,,,,,,,,,,林成鲁,,,,,,,,,,,吴恒显,,,,,,,,,,,陆世桢,,,,,,,,,,,沈振东.离子注入硅Nd-YAG连续激光退火[J].电子学报,1979(04):81-85. DOI：

邹世昌, B.I.Deutch, 柳襄怀, et al. CW Nd-YAG LASER ANNEALING OF ION IMPLANTED SILICON[J]. Acta Electronica Sinica, 1979, (4): 81-85. DOI：

摘要

本文报导用扫描Nd-YAG连续激光对<100>硅中注铋的损伤层进行的退火研究。测量表明:退火能使离子注入造成的晶格损伤很好恢复

90％以上的铋原子处于替代位置

杂质浓度的分布保持不变。文中对退火参数的选择、均匀性

以及表面温度升高、外延再生长层厚度等问题进行了讨论。文末还将实验结果与熔化型脉冲激光退火进行了比较。

Abstract

CW Nd-YAG laser was used to investigate annealing behavior of <100> Si implanted with Bi ions. The backscattering and channeling measurments indicated that CW Nd-YAG laser annealing is one of nonmelting solid phase epitaxial regrowth process

which optimizes complete recovery of lattice damage and high substitutibility of Bi atoms without impurity redistribution. The experimental results were compared with pulsed Q-switched laser annealing

which induced surface layer melting and impurity redistribution.

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