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Published:1965
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[1]陈继义.X波段上变容二极管参数的测量[J].电子学报,1965(02):140-149.
CHEN JI-YI. MEASUREMENT OF VARACTOR PARAMETERS AT X BAND[J]. Acta Electronica Sinica, 1965, (2): 140-149.
本文研究了X波段上半导体变容二极管在负偏压下的等效电路
提出了测量二极管Q
d
值和等效电路各参数值的三种方法。第一种方法是测量二极管在各偏压点下的输入阻抗与管壳阻抗。这种方法的突出优点是适合于二极管串联电阻r
s
随负偏压而变化的情况。第二种方法
在已知等效管壳电容的条件下
由测得的输入阻抗就能直接求得二极管的Q
d
值和等效电路的各参数值;但此法要求串联电阻r
s
不随负偏压而变化。第三种方法是测量二极管在各负偏压点下的输入阻抗与低频结电容C(V)来求得二极管的结参数;因而
为某些二极管
如砷化镓二极管
提供了一种测试方法。实验结果表明用上述三种方法所求得的Q
d
值和等效电路的各参数值有很好的一致性。
The equivalent circuit of a negatively biased varactor at X band is investigated in this paper. Three methods for measuring the Qd-values and the equivalent circuit parameters of varactors are suggested. The first method is based on the measurements of the input impedance at various bias voltages and the cartridge impedance of the diode. This method is suitable to a varactor diode with a series resistance rs which is a function of the negatively biased voltage. By the second method
the Qd-value and the varactor parameters are simply calculated from the measurements of the input impedance
provided that equivalent capacitance of the cartridge is known. However
this method is only applicable to the case that the series resistance rs is independent of the negatively biased voltage. In the third method the parameters of a varactor diode are determined by the measurements of the input impedance only at negative biases and the junction capacitance at low frequency; consequently
a method is given for measuring some varactors
such as GaAs
which is inhibited to be biased positively. Experimental results of the measurements of varactor parameters show that they are well checked with each other for all three methods.
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