THE EXPERIMENTAL RESEARCH OF SCHOTTKY BARRIERS FOR MILLIMETER BAND DEVICES

Xue Jia-wen

您当前的位置：

首页 >

文章列表页 >

THE EXPERIMENTAL RESEARCH OF SCHOTTKY BARRIERS FOR MILLIMETER BAND DEVICES

更新时间：2025-12-08

- THE EXPERIMENTAL RESEARCH OF SCHOTTKY BARRIERS FOR MILLIMETER BAND DEVICES
- Acta Electronica Sinica Issue 1, Pages: 81-84(1978)
- 作者机构：
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1978
- 稿件说明：
移动端阅览
[1]薛家文.毫米波器件肖特基势垒的实验研究[J].电子学报,1978(01):81-84.

Xue Jia-wen. THE EXPERIMENTAL RESEARCH OF SCHOTTKY BARRIERS FOR MILLIMETER BAND DEVICES[J]. Acta Electronica Sinica, 1978, (1): 81-84.
[1]薛家文.毫米波器件肖特基势垒的实验研究[J].电子学报,1978(01):81-84. DOI：

Xue Jia-wen. THE EXPERIMENTAL RESEARCH OF SCHOTTKY BARRIERS FOR MILLIMETER BAND DEVICES[J]. Acta Electronica Sinica, 1978, (1): 81-84. DOI：

摘要

本文给出了Zr、Ti、Ta、Mo、Tazr

MoCr等金属在硅上制作肖特基势垒的一些实验结果。初步实验表明

锆（Zr）具有很低的势垒高度

适合于制作检波二极管。经过适当热处理的MoCr-Si势垒

用于制作八毫米混频二极管

可靠性好

其整机噪声系数为7dB。

Abstract

Some experimental results are described for Schottky barriers made on silicon by using barrier metals such as Zr

TaZr and MoCr. The preliminary experimental results have shown that the Zr-Si barrier has a very low barrier height and is suitable for fabrication of detector diodes. A MoCr-Si barrier treated at proper temperature is applied to the fabrication of an 8mm mixer diode

which has a high reliability and an overall noise figure of about 7dB.

关键词

Keywords

references

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

No data

Related Author

No data

Related Institution

No data

⁰