The Multilayer GaAs Epitaxial Growth Technique in a Reactor of two Chambers

张德宏; 陈桂章; 周碧如

您当前的位置：

首页 >

文章列表页 >

The Multilayer GaAs Epitaxial Growth Technique in a Reactor of two Chambers

更新时间：2025-12-08

- The Multilayer GaAs Epitaxial Growth Technique in a Reactor of two Chambers
- Acta Electronica Sinica Issue 4, Pages: 73-78(1980)
- 作者机构：
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1980
- 稿件说明：
移动端阅览
[1]张德宏,,,,,,,,,陈桂章,,,,,,,,,周碧如.双室反应管研制多层GaAs汽相外延生长技术[J].电子学报,1980(04):73-78.

张德宏, 陈桂章, 周碧如. The Multilayer GaAs Epitaxial Growth Technique in a Reactor of two Chambers[J]. Acta Electronica Sinica, 1980, (4): 73-78.
[1]张德宏,,,,,,,,,陈桂章,,,,,,,,,周碧如.双室反应管研制多层GaAs汽相外延生长技术[J].电子学报,1980(04):73-78. DOI：

张德宏, 陈桂章, 周碧如. The Multilayer GaAs Epitaxial Growth Technique in a Reactor of two Chambers[J]. Acta Electronica Sinica, 1980, (4): 73-78. DOI：

摘要

本文提出了一种研制多层GaAs汽相外延的装置

概述了用双室反应管制备多层GaAs薄膜的实验方法及部分结果。本技术的特点是避免了杂质的存贮效应。针对微波器件的应用

制备了三种类型的多层外延片

用这些材料制管

最佳特性为:体效应管在56.5GHz下

输出功率144mW

效率3.84％;场效应晶体管在9.3GHz下

噪声系数2.4dB

相关增益6.5dB;崩越二极管在8.57GHz下

连续波输出功率达3W

效率20.2％。

Abstract

This work presents the growth apparatus of VPE multilayer GaAs and outlines the experimental technique and some results of experiments for preparation of multilayer GaAs layer in a reactor of two chambers. The feature of this technique is to avoid storage effect. Three sorts of layers have been prepared for microwave device applications. Using these

materials

we have obtained a 144 mW output power with 3.84% efficiency at 56.5 GHz

a noise figure of 2.4 dB with an associated gain of 6.5dB at 9.3 GHz and a continuous power output of 3W with 20.2% efficiency at 8.57GHz for the Gunn diode

FET and IMPATT diode respectively.

关键词

Keywords

references

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

No data

Related Author

No data

Related Institution

No data

⁰