A Magneto-Sensitivity Theory of Double Injection Long Diode

Huang De-xing

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A Magneto-Sensitivity Theory of Double Injection Long Diode

更新时间：2025-12-08

- A Magneto-Sensitivity Theory of Double Injection Long Diode
- Acta Electronica Sinica Issue 4, Pages: 43-52(1980)
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- Published：1980
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[1]黄得星.双注入长二极管的磁灵敏度理论[J].电子学报,1980(04):43-52.

Huang De-xing. A Magneto-Sensitivity Theory of Double Injection Long Diode[J]. Acta Electronica Sinica, 1980, (4): 43-52.
[1]黄得星.双注入长二极管的磁灵敏度理论[J].电子学报,1980(04):43-52. DOI：

Huang De-xing. A Magneto-Sensitivity Theory of Double Injection Long Diode[J]. Acta Electronica Sinica, 1980, (4): 43-52. DOI：

摘要

本文用载流子连续方程研究了在一个侧面设置高复合中心的双注入长“基区”二极管的磁阻效应

导出了载流子有效寿命、伏安特性同磁场强度的函数关系和磁灵敏度的表达式

并分别给出了强弱磁场下的有关近似表达式。实验结果表明

理论同实验相符合。

Abstract

In this paper a magneto-resistance effect of the double injection long diode with the introduction of a high recombination centre on one of the lateral surfaces is studied based on the two-dimentio-nal equation. The general relation between the carrier effective lifetime

J-V charafteristics and the magnetic field is clarified

the magneto-sensitivity established

and their approximate expressions in a strong or weak magnetic field are given as well.Finally

the theory is compared with the experimental curve and data of Germanium-magneto-diode. The result indicates that the theory agrees with the experiment.

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