A Technique for Fabricating High-sensitivity Thick Tri-alkali Antimonide Photocathode

王凤迎; 高景华

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A Technique for Fabricating High-sensitivity Thick Tri-alkali Antimonide Photocathode

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- A Technique for Fabricating High-sensitivity Thick Tri-alkali Antimonide Photocathode
- Acta Electronica Sinica Issue 1, Pages: 46-50(1980)
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- Published：1980
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[1]王凤迎,,,,,,,,,高景华.高灵敏度厚三碱光电阴极的制备[J].电子学报,1980(01):46-50.

王凤迎, 高景华. A Technique for Fabricating High-sensitivity Thick Tri-alkali Antimonide Photocathode[J]. Acta Electronica Sinica, 1980, (1): 46-50.
[1]王凤迎,,,,,,,,,高景华.高灵敏度厚三碱光电阴极的制备[J].电子学报,1980(01):46-50. DOI：

王凤迎, 高景华. A Technique for Fabricating High-sensitivity Thick Tri-alkali Antimonide Photocathode[J]. Acta Electronica Sinica, 1980, (1): 46-50. DOI：

摘要

本文讨论了厚三碱光电阴极在实用光学纤维面板输入窗象增强管中的制备工艺和有关问题。在15只样管中

光电阴极的平均积分灵敏度为325μA/lm

最低为270μA/lm

最高为440μA/lm。红外响应一般为6mA/W左右（波长为0.99m处）

最高可达10.8mA/W。光谱灵敏度峰值分布在0.55～0.65μm处

阈值波长延伸到0.95μm以上。文中论述了厚三碱光电阴极的结构。在此基础上提出的改进工艺

可使产品一致性和成品率得到提高

并使制备时间大大缩短。

Abstract

The paper discusses the processes of fabricating high sensitivity thick tri-alkali antimonide photocathode on inside surface of fibre-optic window in an image intensifier. Following data have been obtained for 15 samples: mean integral sensitivity 3251μA/lm

minimum sensitivity 270μA/lm

maximum sensitivity 440μA/lm. When λ is 0.9μm

IR response is usually at approximate 6mA/W

the highest being 10.8 mA/W.Peak of photo sensitivity distribution occurs at 0.55 to 0.65μm

wavelength threshold can be extended to above 0.95μm.

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