Ohmic Contacts on N-type GaAs Produced by Pulsed Laser Irradiation

Wu Heng-xian

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Ohmic Contacts on N-type GaAs Produced by Pulsed Laser Irradiation

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- Ohmic Contacts on N-type GaAs Produced by Pulsed Laser Irradiation
- Acta Electronica Sinica Issue 2, Pages: 94-96(1981)
- 作者机构：
  
  1. 上海光学精密机械研究所
  2. 上海冶金所
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1981
- 稿件说明：
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[1]吴恒显,柳襄怀,林成鲁,吴鼎芬,陈朝荣,陈芬扣,邬慧娟.用脉冲激光束在N型GaAs上制备欧姆接触[J].电子学报,1981(02):94-96.

Wu Heng-xian. Ohmic Contacts on N-type GaAs Produced by Pulsed Laser Irradiation[J]. Acta Electronica Sinica, 1981, (2): 94-96.
[1]吴恒显,柳襄怀,林成鲁,吴鼎芬,陈朝荣,陈芬扣,邬慧娟.用脉冲激光束在N型GaAs上制备欧姆接触[J].电子学报,1981(02):94-96. DOI：

Wu Heng-xian. Ohmic Contacts on N-type GaAs Produced by Pulsed Laser Irradiation[J]. Acta Electronica Sinica, 1981, (2): 94-96. DOI：

摘要

本文用调Q红宝石脉冲激光器（波长6943A、脉宽30ns）以1.1～2.9J/cm

的激光能量密度

在N型GaAs上进行激光合金化研究

试验了不同GaAs外延层浓度、不同合金层组分、不同激光脉冲次数对欧姆接触电阻率的影响。结果表明

适当能量密度激光合金化所得到的接触电阻率同加热合金化最好结果相当或更好

激光合金化表面均匀

质量好

而且不影响半导体器件内结的特性。

Abstract

Laser alloying on n-type GaAs by Q-switch ruby pulsed laser （6943A

30ns） With energy desity 1.1-2.9J/cm2 is introduced The dependence of contact resistivity on laser energy density

carrier concentration

pulse number and alloy composition was investigated. The experimental results are given to show that satisfied contact resistivity can be obtained with four compositions which is similar or even better than that of the thermal alloying. The topography is more uniform and smooth after laser alloying with optimum energy density.

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