A Polycrystalline-Emitter Super-Gain Transistor

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- A Polycrystalline-Emitter Super-Gain Transistor
- Acta Electronica Sinica Issue 2, Pages: 39(1981)
- 作者机构：
  
  北京电子管厂
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1981
- 稿件说明：
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[1]张全,朱恩均.多晶发射极超增益晶体管[J].电子学报,1981(02):39.

Zhang Quan, Zhu En-jun. A Polycrystalline-Emitter Super-Gain Transistor[J]. Acta Electronica Sinica, 1981, (2): 39.
[1]张全,朱恩均.多晶发射极超增益晶体管[J].电子学报,1981(02):39. DOI：

Zhang Quan, Zhu En-jun. A Polycrystalline-Emitter Super-Gain Transistor[J]. Acta Electronica Sinica, 1981, (2): 39. DOI：

用多晶发射极工艺制成了超增益晶体管

当I

从1mA减小到20nA时

始终保持在2000左右。

A super gain transistor is trial-manufactured by polycryslalline-emitter technology

It’s HFE value is kept about 2000 when Ic varied from 1mA to 20nA.

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