THE SURFACE MECHANISM OF SILICON DIFFUSED FROM THE BORON NITRIDE PLANAR SOURCE

Zhang Aizhen

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THE SURFACE MECHANISM OF SILICON DIFFUSED FROM THE BORON NITRIDE PLANAR SOURCE

更新时间：2025-12-08

- THE SURFACE MECHANISM OF SILICON DIFFUSED FROM THE BORON NITRIDE PLANAR SOURCE
- Acta Electronica Sinica Issue 4, Pages: 66-73(1979)
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- Published：1979
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[1]张爱珍.氮化硼片源扩散下的硅表面机构[J].电子学报,1979(04):66-73.

Zhang Aizhen. THE SURFACE MECHANISM OF SILICON DIFFUSED FROM THE BORON NITRIDE PLANAR SOURCE[J]. Acta Electronica Sinica, 1979, (4): 66-73.
[1]张爱珍.氮化硼片源扩散下的硅表面机构[J].电子学报,1979(04):66-73. DOI：

Zhang Aizhen. THE SURFACE MECHANISM OF SILICON DIFFUSED FROM THE BORON NITRIDE PLANAR SOURCE[J]. Acta Electronica Sinica, 1979, (4): 66-73. DOI：

摘要

对在氮化硼片源扩散下的硅表面结构和质量输运进行了观测。实验发现

预扩散后的硅表面由未反应的HBO

淀积层——硼硅玻璃层——Si-B相层组成。这种表面系统

特别是Si-B相的结构和性质

随扩散条件而变化。文中从一般硼掺杂的原理出发

提出了一种对表面过程的机理的分析

认为不同表面系统的形成是扩散控制表面反应的结果

由此可解释观测到的各种实验现象。

Abstract

The surface structure and mass transport of silicon diffused from the boron nitride planar source were examined by means of trasmission infrared spectroscopy

scanning electroscope

eltipsometer and four probe measurements

etc. It was found experimentallythat the prediffused silicon surface wascomposed of unreactive deposited HBO21layer——boron silicon glass layer——Si-B phase layer. This surfacesystem

especially the structure and properties of the Si-B phase

changes with diffusion conditions. For the mechanism of the surface process

an analysis based on the general principles of boron doping was given. The conclusion was that the formation of different surface systems result from diffusion control surface reaction. By means of this

phenomena observed in various experiments can be explained.

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