The experimental results on fabricating the bipolar ECL silicon IC by ion implantation are reported. The resistor and transistor base doping has been accomplished by implanted boron

while the emitter doping by implanted phosphorus. The average delay time per gate of the sample circuit is typically 2 ns.Tbe present paper is devoted to describe the effect of the implanted energy

dose

and annealing temperature and time on electrical characteristics of circuit components.