A New Noise Parameter Measurement Method for GaAs FET/pHEMT Devices

LIU Zhang-wen; JIANG Yi; GU Tian-xiang

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A New Noise Parameter Measurement Method for GaAs FET/pHEMT Devices

更新时间：2025-07-16

- A New Noise Parameter Measurement Method for GaAs FET/pHEMT Devices
- Acta Electronica Sinica Vol. 34, Issue 2, Pages: 352-355(2006)
- 作者机构：
  
  1. 电子科技大学自动化工程学院,四川,成都,610054
  2. 中国工程物理研究院应用电子学研究所,四川,绵阳,621900
  3. 电子科技大学自动化工程学院四川成都,610054
  4. 中国工程物理研究院应用电子学研究所四川绵阳,621900
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN406
- Published Online：25 February 2006，
  
  Published：2006
- 稿件说明：
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LIU Zhang-wen, JIANG Yi, GU Tian-xiang. A New Noise Parameter Measurement Method for GaAs FET/pHEMT Devices[J]. Acta Electronica Sinica, 2006, 34(2): 352-355.
DOI：

LIU Zhang-wen, JIANG Yi, GU Tian-xiang. A New Noise Parameter Measurement Method for GaAs FET/pHEMT Devices[J]. Acta Electronica Sinica, 2006, 34(2): 352-355. DOI：

摘要

本文提出一种FET/pHEMT器件噪声参数提取的新方法.该方法利用50 Ω 输入阻抗噪声系数F

的测量

通过本征H参数和本征级联噪声矩阵 C

INT

确定出关于门噪声温度T

和漏噪声温度T

的线性方程.后对所有频点的线性方程T

-T

作统计分析

即可确定T

和T

.再由噪声网络合成原理求得总的级联噪声相关矩阵 C

相应的噪声参数(F

min

和 Γ

opt

)也求出来了.三个FET/pHEMT器件的测量结果显示出

实测参数与Garcia和Lázaro的方法吻合得很好.

Abstract

A new method for measuring the noise parameters of a FET/pHEMT device is proposed.By measuring the matched (50 Ω ) noise figure

based on the intrinsic H-parameters and the intrinsic chain noise matrix C

emA

INT

the linear equation of the gate noise temperature

and drain noise temperature

is obtained.The statistic analysis of the

-T

figure is performed at all frequencies range

and then the measured noise temperatures

and

are determined.In terms of noise network synthesis theory

the full chain noise matrix C

emA is co

mputed

and the corresponding noise parameters(

min

emn and Γ

opt

) are determined.The measurements for three FET/ pHEMT devices show that the results are perfectly in accordance with these by means of Garcia and Lázaro.

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Related Author

LIU Zhang-wen

GU Tian-xiang

Lou Tao

戴逸松

Related Institution

Institute of Applied Electronics,CAEP

Institute of Applied ElectronicsCAEPMianyangSichuan 621900China

Dept. of Radio Engineering,Southeast University ,Nanjing210018)Dal Yisong

吉林工业大学电子工程学深圳518028

长春 130025

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