为实现单相半桥逆变器的高效率运行,设计了一种新型单相低能耗半桥逆变器.在逆变器工作过程中,主开关和辅助开关均能完成零电压软切换,逆变器主开关采用高频金属氧化物半导体场效应晶体管(Metal Oxide Semiconductor Field Effect Transistor,MOSFET)时,都能实现零损耗切换,消除了MOSFET内部结电容导致的容性开通损耗.文中具体分析了电路工作过程.在额定功率为1kW样机上的实验结果表明开关器件都实现了软切换.因此该半桥软开关逆变器拓扑结构对于提高逆变器的性能具有重要意义.
Abstract
In order to realize the operation of a single-phase half-bridge inverter with high-efficiency
a novel single-phase low-energy half-bridge inverter is designed. In the working process of the inverter
both the main switch and the auxiliary switch can achieve zero-voltage soft switching. When the high frequency Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is used as the main switch of the inverter
it can achieve zero-loss switching
which eliminates capacitive turn-on loss caused by the junction capacitance inside the MOSFET. In this paper
the working process of circuit is analyzed in detail. Experimental results on a prototype with rated power of 1 kW show that all switching devices achieve soft switching. Therefore
the topology of the half-bridge soft-switching inverter is of great significance to improve the performance of the inverter.
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