An Improved On-State Analytical Model for the SPT+IGBT Based on Hefner Model

SUN Zhi-yu; WEI Xiao-guang; ZHAO Zhi-bin; ZHOU Wan-di

doi:10.12263/DZXB.20200117

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An Improved On-State Analytical Model for the SPT+IGBT Based on Hefner Model

更新时间：2025-12-08

- An Improved On-State Analytical Model for the SPT+IGBT Based on Hefner Model
- Acta Electronica Sinica Vol. 49, Issue 3, Pages: 492-499(2021)
- 作者机构：
  
  1. 华北电力大学新能源电力系统国家重点实验室,北京,102206
  2. 全球能源互联网研究院有限公司,北京,102209
  3. 华北电力大学新能源电力系统国家重点实验室,北京,102206
  4. 全球能源互联网研究院有限公司,北京,102209
- 作者简介：
- 基金信息：
  
  supported by Joint Fund of National Natural Science Foundation of China and State Grid Corporation of China Smart Grid Plan (No.U1766219)
- DOI：10.12263/DZXB.20200117
  CLC： TN3
- Published Online：25 March 2021，
  
  Published：2021
- 稿件说明：
移动端阅览
SUN Zhi-yu, WEI Xiao-guang, ZHAO Zhi-bin, et al. An Improved On-State Analytical Model for the SPT+IGBT Based on Hefner Model[J]. Acta Electronica Sinica, 2021, 49(3): 492-499.
DOI：

SUN Zhi-yu, WEI Xiao-guang, ZHAO Zhi-bin, et al. An Improved On-State Analytical Model for the SPT+IGBT Based on Hefner Model[J]. Acta Electronica Sinica, 2021, 49(3): 492-499. DOI： 10.12263/DZXB.20200117.

摘要

新一代增强平面栅软穿通型（Soft Punch Through+，SPT+） IGBT采用了阴极侧载流子浓度增强技术，降低了通态损耗.现有仿真模型大多是基于典型穿通型（Punch Through，PT） IGBT建立的，无法准确描述SPT+型IGBT的通态特性.本文在现有PT模型的基础上，结合SPT+型IGBT的结构特点和工作特性，将基区分为PIN区和PNP区两个部分，对阴极侧载流子分布进行优化，提出一种改进的SPT+型IGBT稳态模型.通过新旧模型的仿真波形与实测波形的对比，验证了改进模型的准确性.

Abstract

The new generation enhanced planar gate soft through (Soft Punch Through+

SPT+) IGBT adopts the cathode-side carrier concentration enhancement technology

which reduces the on-state loss. Existing simulation models are mostly based on typical Punch Through (PT) IGBTs

which cannot accurately describe the on-state characteristics of SPT+IGBT. Based on the existing PT model and combining the structural and operating characteristics of SPT+IGBTs

this paper divides the base region into two parts

PIN and PNP regions

and optimizes the cathode-side carrier distribution. An improved steady state model for SPT+IGBT is proposed. The accuracy of the improved model is verified by comparing the simulated and measured waveforms of the old and new models.

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