HUANG Zheng-feng, PAN Shang-jie, CAO Jian-fei, et al. Design of Triple-Node-Upset Self-Recovery Latch in 32nm CMOS Technology[J]. Acta Electronica Sinica, 2021, 49(2): 394-400.
DOI:
HUANG Zheng-feng, PAN Shang-jie, CAO Jian-fei, et al. Design of Triple-Node-Upset Self-Recovery Latch in 32nm CMOS Technology[J]. Acta Electronica Sinica, 2021, 49(2): 394-400. DOI: 10.12263/DZXB.20200530.
Design of Triple-Node-Upset Self-Recovery Latch in 32nm CMOS Technology
The feature size of CMOS technology is continuously shrinking
and the single event triple-node-upset induced by the charge sharing effect has become a research hotspot. This paper proposed a single event triple-node-upset self-recovery radiation-hardened latch: Hydra-DICE. The latch is arranged in an array structure based on 24 homogeneous cross-coupled elements (CCE). When a single event upset occurs at any three internal nodes concurrently
Hydra-DICE can realize the function of self-recovery to the correct logical value. Compared with the TNURL latch which has the equivalent triple-node-upset self-recovery capability
the Hydra-DICE latch has a 50% reduction in area overhead
a 48.28% reduction in delay
a 25.00% reduction in power consumption
and a 61.21% reduction in power consumption delay product. The simulation results show that the hardened latch has made a good compromise in fault tolerance performance