The Establishment of High-Frequency Silicon-Based Phototransistor SPICE Model and the Extraction of Key Parameters

ZHANG Zi-tong; JIANG Yan-feng

doi:10.12263/DZXB.20200657

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The Establishment of High-Frequency Silicon-Based Phototransistor SPICE Model and the Extraction of Key Parameters

PAPERS | 更新时间：2025-12-08

- The Establishment of High-Frequency Silicon-Based Phototransistor SPICE Model and the Extraction of Key Parameters
- ACTA ELECTRONICA SINICA Vol. 49, Issue 8, Pages: 1645-1652(2021)
- 作者机构：
  
  江南大学物联网工程学院，江苏无锡 214000
- 作者简介：
- 基金信息：
- DOI：10.12263/DZXB.20200657
  CLC： TN364
- Received：08 July 2020，
  
  Revised：2021-03-12，
  
  Published：25 August 2021
- 稿件说明：
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张子同,姜岩峰.高频硅基光电晶体管SPICE模型的建立及关键参数的提取[J].电子学报,2021,49(08):1645-1652.

ZHANG Zi-tong,JIANG Yan-feng.The Establishment of High-Frequency Silicon-Based Phototransistor SPICE Model and the Extraction of Key Parameters[J].ACTA ELECTRONICA SINICA,2021,49(08):1645-1652.
张子同,姜岩峰.高频硅基光电晶体管SPICE模型的建立及关键参数的提取[J].电子学报,2021,49(08):1645-1652. DOI： 10.12263/DZXB.20200657.

ZHANG Zi-tong,JIANG Yan-feng.The Establishment of High-Frequency Silicon-Based Phototransistor SPICE Model and the Extraction of Key Parameters[J].ACTA ELECTRONICA SINICA,2021,49(08):1645-1652. DOI： 10.12263/DZXB.20200657.

摘要

硅基光电晶体管在高频通信、自动控制、电力系统领域具有广泛的应用前景.从系统验证和仿真的角度，迫切需要建立光电晶体管的等效电路模型，该模型需要包含电学特性和光学特性.本文提出了一种高频(100MHz~1GHz)硅基光电晶体管的SPICE(Simulation Program with Integrated Circuit Emphasis)等效模型，包含器件的主要光电特性，通过TCAD(Technology Computer Aided Design)仿真建立了模型中关键电学和光学参数的提取方法.基于所建立的高频光电晶体管的SPICE模型等效电路进行仿真，所得到的仿真结果能够完整描述光电晶体管的电学特性和光学特性，并验证了模型在器件模拟与电路应用上的可行性，表明本文所提出的SPICE模型和参数提取方法，对于基于高频光电晶体管的系统仿真，具有参考价值.

Abstract

Silicon-based phototransistors have broad application prospects in the fields of high-frequency communication

automatic control

and power systems. From the perspective of system verification and simulation

there is an urgent need to establish an equivalent circuit model of phototransistors

which needs to include electrical and optical characteristics. This paper proposes a SPICE equivalent model of high-frequency(100MHz~1GHz) silicon-based phototransistors

including the main photoelectric characteristics of the device

and the extraction method of key electrical and optical parameters in the model is established by TCAD simulation. Based on the established SPICE model equivalent circuit of the high-frequency phototransistor

the simulation results can fully describe the electrical and optical characteristics of the phototransistor

it shows that the SPICE model and parameter extraction method proposed in this paper have reference value for system simulation based on high-frequency phototransistor.

关键词

Keywords

references

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