Effect of Annealing Temperature on Performance of ZnO-TFTs Based on Bi1.5Zn1.05Nb1.5O7 Gate Insulator

ZHANG Qi; YE Wei; SUN Fang-li; XIAO Sheng; DU Peng-fei

doi:10.12263/DZXB.20210031

您当前的位置：

首页 >

文章列表页 >

Effect of Annealing Temperature on Performance of ZnO-TFTs Based on Bi_1.5Zn_1.05Nb_1.5O₇ Gate Insulator

PAPERS | 更新时间：2025-12-08

- Effect of Annealing Temperature on Performance of ZnO-TFTs Based on Bi_1.5Zn_1.05Nb_1.5O₇ Gate Insulator
- ACTA ELECTRONICA SINICA Vol. 50, Issue 2, Pages: 455-460(2022)
- 作者机构：
  
  1.陕西理工大学机械工程学院，陕西汉中 723001
  2.西北工业集团有限公司，陕西西安 710043
- 作者简介：
- 基金信息：
- DOI：10.12263/DZXB.20210031
  CLC： TN321.5
- Received：28 December 2020，
  
  Revised：2021-06-19，
  
  Published：25 February 2022
- 稿件说明：
移动端阅览
张琦,叶伟,孙芳莉等.退火温度对基于Bi_1.5Zn_1.05Nb_1.5O₇栅绝缘层的ZnO-TFTs性能的影响[J].电子学报,2022,50(02):455-460.

ZHANG Qi,YE Wei,SUN Fang-li,et al.Effect of Annealing Temperature on Performance of ZnO-TFTs Based on Bi_1.5Zn_1.05Nb_1.5O₇ Gate Insulator[J].ACTA ELECTRONICA SINICA,2022,50(02):455-460.
张琦,叶伟,孙芳莉等.退火温度对基于Bi_1.5Zn_1.05Nb_1.5O₇栅绝缘层的ZnO-TFTs性能的影响[J].电子学报,2022,50(02):455-460. DOI： 10.12263/DZXB.20210031.

ZHANG Qi,YE Wei,SUN Fang-li,et al.Effect of Annealing Temperature on Performance of ZnO-TFTs Based on Bi_1.5Zn_1.05Nb_1.5O₇ Gate Insulator[J].ACTA ELECTRONICA SINICA,2022,50(02):455-460. DOI： 10.12263/DZXB.20210031.

摘要

具有高介电常数的Bi

1.5

1.05

1.5

薄膜存在氧空位和陷阱缺陷，因此，使用Bi

1.5

1.05

1.5

作为栅绝缘层的ZnO-TFTs具有高的界面费米能级钉扎效应和低的电学性能.为了解决这些问题，提高器件性能，本文采用射频磁控溅射制备了以Bi

1.5

1.05

1.5

为栅绝缘层的ZnO-TFTs，同时，详细研究了300℃、400℃、500℃和600℃等退火温度对ZnO-TFTs性能的影响，研究结果表明，随着退火温度的升高，Bi

1.5

1.05

1.5

栅绝缘层和ZnO-TFTs的性能先升高后降低，在退火温度为500℃时，Bi

1.5

1.05

1.5

栅绝缘层和ZnO-TFTs的性能都得到了显著提高，电容密度从165nF/cm

升高到222nF/cm

，开关比从10

升高到10

Abstract

1.5

1.05

1.5

thin films with high dielectric constant have oxygen vacancy and trap defects. Therefore

ZnO-TFTs using Bi

1.5

1.05

1.5

as gate insulator have high interface Fermi level pinning effect and low electrical properties. To solve these problems and improve device performance

ZnO-TFTs with Bi

1.5

1.05

1.5

as gate insulator were prepared by RF magnetron sputtering. Meanwhile

the effect of the annealing temperature from 300℃ to 600℃ at an interval of 100℃ on the performance of ZnO-TFTs was studied. The research results showed that with the increase of annealing temperature

the properties of Bi

1.5

1.05

1.5

gate insulator and ZnO-TFTs increased at first and then decreased. The performance of Bi

1.5

1.05

1.5

gate insulator and ZnO-TFTs was significantly improved at annealing temperature of 500℃. The capacitance density and

off

increased from 165nF/cm

to 222nF/cm

and from 10

to 10

respectively.

关键词

Keywords

references

YU X , MARKS T J , FACCHETTI A . Metal oxides for optoelectronic applications [J]. Nature Materials , 2016 , 15 : 383 ‑ 396 .

KANDPAL K , GUPTA N . Perspective of zinc oxide based thin film transistors: A comprehensive review [J]. Microelectronics International , 2018 , 35 ( 1 ): 52 ‑ 63 .

ABLIZ A , XU L , WAN D , et al . Effects of yttrium doping on the electrical performances and stability of ZnO thin-film transistors [J]. Applied Surface Science , 2019 , 475 : 565 ‑ 570 .

VYAS S , DWIVEDI A D D , DWIVEDI R D . Effect of gate dielectric on the performance of ZnO based thin film [J]. Superlattices and Microstructures , 2018 , 120 : 223 ‑ 234 .

TAKAGI , SHIN-ICHI , TAKAYANAGI M . Experimental evidence of inversion-layer mobility lowering in ultrathin gate oxide metal-oxide-semiconductor field-effect-transistors with direct tunneling current [J]. Japanese Journal of Applied Physics , 2014 , 41 ( 4B ): 2348 ‑ 2352 .

WILK G D , WALLACE R M , ANTHONY J M . High-k gate dielectrics: Current status and materials properties considerations [J]. Journal of Applied Physics , 2001 , 89 ( 10 ): 5243 ‑ 5275 .

CHOI Y W , KIM II D , TULLER H L , et al . Low-voltage organic transistors and depletion-load inverters with high-k pyrochlore BZN gate dielectric on polymer substrate [J]. IEEE Transactions on Electron Devices , 2005 , 52 ( 12 ): 2819 ‑ 2824 .

KIM II , CHOI Y W , TULLER H L . Low-voltage ZnO thin-film transistors with high-k Bi 1.5 Zn 1.0 Nb 1.5 O 7 gate insulator for transparent and flexible electronics [J]. Applied Physics Letters , 2005 , 87 ( 4 ): 0435091 ‑ 0435093 .

KIM II D , LIM M H , KANG K T , et al . Room temperature fabricated ZnO thin film transistor using high-k Bi 1.5 Zn 1.0 Nb 1.5 O 7 gate insulator prepared by sputtering [J]. Applied Physics Letters , 2006 , 89 ( 2 ): 0229051 ‑ 0229053 .

YE W , REN W , SHI P , et al . Effect of sputtering power on properties of ZnO thin film transistors with Bi 1.5 Zn 1.0 Nb 1.5 ‑ O 7 gate insulator [J]. Ceramics International , 2015 , 41 : S750 ‑ S757 .

YE W , REN W , SHI P , et al . Effect of annealing temperature of Bi 1.5 Zn 1.0 Nb 1.5 O 7 gate insulator on performance of ZnO based thin film transistors [J]. Journal of Semiconductors , 2016 , 37 ( 7 ): 0740071 ‑ 0740076 .

NGWASHI D K , PAUL S , DEVI A , et al . Electrical performance and stability of ZnO thin-film transistors incorporating gadolinium oxide high-k dielectrics [J]. Advances in Materials , 2018 , 7 ( 4 ): 137 ‑ 143

ALSHAMMARI F H , NAYAK P K , WANG Z , et al . Enhanced ZnO thin-film transistor performance using bilayer gate dielectrics [J]. ACS Applied Materials & Interfaces , 2016 , 35 ( 8 ): 2 2751‑ 22755 .

SAHA J K , BUKKE R N , MUDE N N , et al . Remarkable stability improvement of ZnO TFT with Al 2 O 3 gate insulator by yttrium passivation with spray pyrolysis [J]. Nanomaterials , 2020 , 10 ( 5 ): 9761 ‑ 97611 .

KATO K , MATSUI H , TABATA H , et al . TiN/Al 2 O 3 /ZnO gate stack engineering for top-gate thin film transistors by combination of post oxidation and annealing [J]. Applied Physics Letters , 2018 , 112 : 1621051 ‑ 1621054 .

RAO M G S , SÁNCHEZ-MARTINEZ A , GUTIÉRREZ-HEREDIA G , et al . Sol-gel derived low temperature HfO 2 -GPTMS hybrid gate dielectric for a-IGZO thin-film transistors(TFTs) [J]. Ceramics International , 2018 , 44 : 1 6428‑ 16434 .

SAHA J K , BILLAH M M , BUKKE R N , et al . Highly stable, nanocrystalline, ZnO thin-film transistor by spray pyrolysis using high-k dielectric [J]. IEEE Transactions on Electron Devices , 2020 , 67 ( 3 ): 1021 ‑ 1026 .

ISLAM M M , SAHA J K , BUKKE R N , et al . Solution-processed La alloyed ZrOx high-k dielectric for high-performance ZnO thin-film transistors [J]. IEEE Electron Device Letters , 2020 , 41 ( 7 ): 1021 ‑ 1024 .

GOGOI P , SAIKIA R , SAIKIA D , et al . ZnO TFTs prepared by chemical bath deposition technique with high-k La 2 O 3 gate dielectric annealed in ambient atmosphere [J]. Physica Status Solidi A , 2015 , 212 ( 4 ): 826 ‑ 830 .

CHO N G , KIM D H , KIM H G , et al . Zinc oxide thin film transistors using MgO-Bi 1.5 Zn 1.0 Nb 1.5 O 7 composite gate insulator on glass substrate [J]. Thin Solid Films , 2010 , 518 ( 10 ): 2843 ‑ 2846 .

JIANG L , HUANG K , LI J , et al . High carrier mobility low-voltage ZnO thin film transistors fabricated at a low temperature via solution processing [J]. Ceramics International , 2018 , 44 : 1 1751‑ 11756 .

LI H , HAN D , YI Z , et al . High-performance ZnO thin-film transistors prepared by atomic layer deposition [J]. IEEE Transactions on Electron Devices , 2019 , 66 ( 7 ): 2965 ‑ 2970 .

LI H , HAN D , DONG J , et al . Enhanced electrical properties of dual-layer channel ZnO thin film transistors prepared by atomic layer deposition [J]. Applied Surface Science , 2018 , 439 : 632 ‑ 637 .

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Effect of SiO₂ Modification of Bi_1.5Zn_1.0Nb_1.5O₇ Gate Insulator on the Performance of ZnO-TFTs

Related Author

Qi ZHANG

Wei YE

Fang-li SUN

Sheng XIAO

Peng-fei DU

YE Wei

CUI Li-kun

CHANG Hong-mei

Related Institution

School of Mechanical Engineering， Shaanxi University of Technology

North Industries Group Pinance Company LTD.

⁰