A High-Reliability Differential Current Compensation Level Shift Circuit for GaN Half-Bridge

ZHAO Peng; JIANG Mei

doi:10.12263/DZXB.20210827

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A High-Reliability Differential Current Compensation Level Shift Circuit for GaN Half-Bridge

PAPERS | 更新时间：2025-12-08

- A High-Reliability Differential Current Compensation Level Shift Circuit for GaN Half-Bridge
- ACTA ELECTRONICA SINICA Vol. 50, Issue 11, Pages: 2561-2567(2022)
- 作者机构：
  
  深圳大学电子与信息工程学院, 广东深圳 518061
- 作者简介：
- 基金信息：
- DOI：10.12263/DZXB.20210827
  CLC： TN432
- Received：01 July 2021，
  
  Revised：2021-09-27，
  
  Published：25 November 2022
- 稿件说明：
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赵鹏,姜梅.一种适用于氮化镓半桥结构的高可靠性差分电流补偿电平移位电路[J].电子学报,2022,50(11):2561-2567.

ZHAO Peng,JIANG Mei.A High-Reliability Differential Current Compensation Level Shift Circuit for GaN Half-Bridge[J].ACTA ELECTRONICA SINICA,2022,50(11):2561-2567.
赵鹏,姜梅.一种适用于氮化镓半桥结构的高可靠性差分电流补偿电平移位电路[J].电子学报,2022,50(11):2561-2567. DOI： 10.12263/DZXB.20210827.

ZHAO Peng,JIANG Mei.A High-Reliability Differential Current Compensation Level Shift Circuit for GaN Half-Bridge[J].ACTA ELECTRONICA SINICA,2022,50(11):2561-2567. DOI： 10.12263/DZXB.20210827.

摘要

为了提高氮化镓半桥结构的抗d

特性，提出了一种适用于氮化镓半桥结构的高可靠性差分电流补偿新颖电平移位电路.该电路在自举电容作用下，将0V~5V输入电压转换为35V~40V输出电压，并且在浮点电压快速变化过程中，输出的驱动电压均保持稳定.电路采用电流镜结构传输信号，能够实现电平信号的快速传递

有效地减小传输延迟.对于浮点电压的快速变化导致移位电平器输出变化的问题，采用新颖的差分电流结构进行电流补偿

提高电路的抗d

特性，获得高可靠性的输出电压.本电路基于标准0.35μm BCD工艺40 V的LDMOS耐压器件，对该电平移位电路在1MHz频率下进行验证.结果表明上升沿响应延迟为587.184ps，下降沿响应延迟为832.144ps，抗正的d

变化为116V/ns以及对负d

变化不敏感，该电路具有高速

高可靠性优点.

Abstract

In order to improve the power supply slew tolerance of the GaN half-bridge structure

a high-reliability differential current compensation level shift circuit suitable for GaN half-bridge structure is proposed. With the help of bootstrap capacitor

this circuit converts the input voltage of 0V to 5V into the output voltage of 35V to 40V and the output driving voltage remains stable during the rapid change of floating-point voltage. The circuit adopts a current mirror structure to transmit signals

which can realize the rapid transmission of level signals and effectively reduce the transmission delay. Since the rapid changing of the power supply voltage causes the output of the level shifter to change

in order to solve this issue

we propose a differential current structure

which is used for current compensation to improve the power supply slew tolerance and stabilize the output result based on the standard 0.35μm BCD(Bipolar-CMOS-DMOS) process and 40V LDMOS(Laterally Diffused Metal-Oxide Semiconductor） high voltage devices

the level shift circuit is verified at 1MHz frequency. The results show that the rising edge response delay and the falling edge response delay are 587.184ps and 832.144ps

respectively

a 116V/ns positive power-rail slew tolerance and infinite negative slew tolerance. This circuit has the advantages of high speed and high reliability.

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references

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