Research on Mextram Model of Germanium Silicon Heterojunction Bipolar Transistor with RF Avalanche Effect

LIU Jing; ZHENG Shao-hua; LIU Yin

doi:10.12263/DZXB.20211066

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Research on Mextram Model of Germanium Silicon Heterojunction Bipolar Transistor with RF Avalanche Effect

PAPERS | 更新时间：2025-12-08

- Research on Mextram Model of Germanium Silicon Heterojunction Bipolar Transistor with RF Avalanche Effect
- ACTA ELECTRONICA SINICA Vol. 51, Issue 6, Pages: 1493-1499(2023)
- 作者机构：
  
  西安理工大学电子工程系，陕西西安 710048
- 作者简介：
- 基金信息：
  
  Key R&D Project in Shaanxi Province of China(2022GY-016)
- DOI：10.12263/DZXB.20211066
  CLC： TN431;
- Received：09 August 2021，
  
  Revised：2022-05-31，
  
  Published：25 June 2023
- 稿件说明：
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刘静,郑少华,刘茵.锗硅异质结双极型晶体管RF雪崩效应Mextram模型研究[J].电子学报,2023,51(06):1493-1499.

LIU Jing,ZHENG Shao-hua,LIU Yin.Research on Mextram Model of Germanium Silicon Heterojunction Bipolar Transistor with RF Avalanche Effect[J].ACTA ELECTRONICA SINICA,2023,51(06):1493-1499.
刘静,郑少华,刘茵.锗硅异质结双极型晶体管RF雪崩效应Mextram模型研究[J].电子学报,2023,51(06):1493-1499. DOI： 10.12263/DZXB.20211066.

LIU Jing,ZHENG Shao-hua,LIU Yin.Research on Mextram Model of Germanium Silicon Heterojunction Bipolar Transistor with RF Avalanche Effect[J].ACTA ELECTRONICA SINICA,2023,51(06):1493-1499. DOI： 10.12263/DZXB.20211066.

摘要

传统Mextram模型基于雪崩倍增电流源

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来描述硅锗异质结双极晶体管的雪崩倍增效应，忽略了射频条件下因雪崩倍增相位延迟以及载流子传输时间延迟带来的集电结电感延迟问题.对硅锗异质结双极晶体管的雪崩倍增效应进行了研究，解释了导致器件集电结中出现电感延迟的物理机制.提出采用击穿电感和电阻分别表征器件的（Radio Frequency，RF）电感延迟特性和雪崩倍增载流子的贡献，建立考虑RF雪崩倍增效应的电感击穿等效电路模型，并嵌入到Mextram 505.00模型中.基于

参数来描述改进模型的验证结果，与传统模型相比，改进模型在应用频率小于35 GHz条件下，显著改善了硅锗异质结双极晶体管的增益和输出阻抗的精度，且不会对器件模型的直流特性拟合精度产生负面影响.同时从改进模型的电子击穿电感

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、电子击穿电阻

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、输出曲线、增益参数和输出阻抗中提取等效电路模型的敏感参数

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和

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.结果表明，基于RF电感击穿等效电路的Mextram 505.00改进模型可以更精确地预测射频条件下雪崩倍增效应发生时硅锗异质结双极晶体管的器件性能.

Abstract

The avalanche current source

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is used to model the avalanche multiplication effect in the traditional SiGe HBT Mextram model

which ignores the base-collector junction inductance delay characteristics due to avalanche multiplication phase delay and carrier transit-time delay under RF (Radio Frequency) conditions. The avalanche multiplication effect is studied and its physical mechanism leading to the inductance delay of SiGe HBT is explained. The breakdown inductance and breakdown resistance are proposed to characterize the contribution of RF inductance delay and avalanche multiplication carriers respectively. The RF avalanche multiplication effect inductive breakdown equivalent circuit is established and it is embedded in Mextram 505.00 model. The S-parameters are used to describe the verification process of the improved model. Compared to the traditional model of the device

the accuracy of the device gain and the output impedance of the improved model is greatly improved in the range of 1~35 GHz. The DC characteristics of the device will not be sacrificed. Meanwhile

the sensitive parameters

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and

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are extracted from the electronic breakdown inductance

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electronic breakdown resistance

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output curve

gain parameter and device output impedance of the improved model. The results show that the improved model with RF inductive breakdown equivalent circuit can predict accurately the performance of SiGe HBT with avalanche multiplication effect under RF conditions.

关键词

Keywords

references

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