ZHOU Yu-ming,MU Shi-lu,YANG Hua,et al.Optimal Gate Turn-Off Delay-Time of Si/SiC Hybrid Switch and Its Application in Inverter[J].ACTA ELECTRONICA SINICA,2023,51(06):1468-1473.
Si/SiC hybrid switch configured by a high-current silicon insulated-gate bipolar transistor (Si IGBT) and a low-current silicon carbon metal-oxide-semiconductor field-effect transistor (SiC MOSFET) in parallel has the advantages of low cost and high efficiency. The delay time of gate turn-off is the key to improve the efficiency of Si/SiC hybrid switch. In this paper
the relationship between the turn-off power loss and the delay time of gate turn-off for Si/SiC hybrid switch with different working current has been investigated
and the result has shown that there is an optimal delay time of gate turn-off for Si/SiC hybrid switch
with this optimal delay time
Si/SiC hybrid switch can achieve minimum turn-off loss
moreover
the optimal delay time will decrease with the increasing of Si/SiC hybrid switch working current. The optimal delay time of gate turn-off for Si/SiC hybrid switch has been applied to sing-phase full bridge inverter
and the experimental result has indicated that the conversion efficiency of inverter with the optimal delay time of gate turn-off is improved by 0.67% compared with the highest conversion efficiency of inverter with fixed delay time of gate turn-off for Si/SiC hybrid switch.
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references
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