A Wafer-Level Vacuum Packaged MEMS Electric Field Sensor Based on SOI-SOG Bonding

LIU Jun; XIA Shan-hong; PENG Chun-rong; CHU Zhao-zhi; LEI Hu-cheng; LIU Xiang-ming; ZHANG Zhou-wei; ZHANG Wei; PENG Si-min; GAO Ya-hao

doi:10.12263/DZXB.20211364

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A Wafer-Level Vacuum Packaged MEMS Electric Field Sensor Based on SOI-SOG Bonding

PAPERS | 更新时间：2025-12-08

- A Wafer-Level Vacuum Packaged MEMS Electric Field Sensor Based on SOI-SOG Bonding
- ACTA ELECTRONICA SINICA Vol. 51, Issue 9, Pages: 2517-2525(2023)
- 作者机构：
  
  1.中国科学院空天信息创新研究院传感技术联合国家重点实验室,北京 100094
  2.中国科学院大学电子电气与通信工程学院,北京 100049
  3.中国科学院微电子研究所,北京 100029
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China(62031025)
- DOI：10.12263/DZXB.20211364
  CLC： TP212;
- Received：09 October 2021，
  
  Revised：2022-03-30，
  
  Published：25 September 2023
- 稿件说明：
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刘俊,夏善红,彭春荣等.基于SOI-SOG键合的圆片级真空封装MEMS电场传感器[J].电子学报,2023,51(09):2517-2525.

LIU Jun,XIA Shan-hong,PENG Chun-rong,et al.A Wafer-Level Vacuum Packaged MEMS Electric Field Sensor Based on SOI-SOG Bonding[J].ACTA ELECTRONICA SINICA,2023,51(09):2517-2525.
刘俊,夏善红,彭春荣等.基于SOI-SOG键合的圆片级真空封装MEMS电场传感器[J].电子学报,2023,51(09):2517-2525. DOI： 10.12263/DZXB.20211364.

LIU Jun,XIA Shan-hong,PENG Chun-rong,et al.A Wafer-Level Vacuum Packaged MEMS Electric Field Sensor Based on SOI-SOG Bonding[J].ACTA ELECTRONICA SINICA,2023,51(09):2517-2525. DOI： 10.12263/DZXB.20211364.

摘要

圆片级真空封装是提高微电子机械系统（Micro-Electro-Mechanical Systems，MEMS）电场传感器品质因数及批量化制造效率的重要途径. 本文提出了一种基于绝缘体上硅（Silicon On Insulator， SOI）-玻璃体上硅（Silicon On Glass，SOG）键合的圆片级真空封装MEMS电场传感器，设计并实现了从传感器敏感结构制备到真空封装的整套圆片级加工工艺. 本文建立了传感器的结构电容模型，进行了有限元仿真，分析了传感器的特性，突破了传感器微结构制备与释放、SOI与SOG键合等工艺技术难点. 该传感器具有工作电压低、品质因数高的突出优点. 实验结果表明，工作电压仅为5 V直流与0.05 V交流电压. 在60天测试过程中，传感器品质因数始终保持在5 000以上. 在0~50 kV/m范围内，传感器灵敏度为0.15 mV/（kV/m），线性度为2.21%，不确定度为4.74%.

Abstract

Wafer-level vacuum packaging is an important way to improve the quality factor of the MEMS (Micro-Electro-Mechanical Systems) electric field sensor and the efficiency of batch manufacture. This paper proposes a novel wafer-level vacuum packaged electric field sensor based on SOI-SOG (Silicon on Insulator-Glass on Silicon) bonding. A wafer-level manufacture process

including the fabrication of sensitive structure and the vacuum package of the sensor

is designed and realized. This paper set up a structural capacitance model of the sensor

carried out the finite element simulation

analyzed the characteristics of the sensor

and broke through the technical difficulties in the microfabrication process

such as the fabrication and release of the microstructure

and the bonding of the SOI and the SOG. The sensor has the advantages of low working voltage and high quality factor. Experimental results reveal that driving signals with 5 V DC voltage and 0.05 V AC voltage are required for the sensor. The quality factor is higher than 5 000

which is kept with no drop in 60-days test. The sensitivity of the sensor is 0.15 mV/(kV/m)

the linearity is 2.21% and the accuracy is 4.74% in the range of 0~50 kV/m.

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references

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