您当前的位置:
首页 >
文章列表页 >
Research on Single-Event Radiation Characteristics of an 8-Gbps SerDes in a 28nm CMOS Technology
PAPERS | 更新时间:2025-12-08
    • Research on Single-Event Radiation Characteristics of an 8-Gbps SerDes in a 28nm CMOS Technology

    • ACTA ELECTRONICA SINICA   Vol. 50, Issue 11, Pages: 2653-2658(2022)
    • DOI:10.12263/DZXB.20211691    

      CLC: TN402
    • Received:23 December 2021

      Revised:2022-07-09

      Published:25 November 2022

    移动端阅览

  • WEN Yi,CHEN Jian-jun,LIANG Bin,et al.Research on Single-Event Radiation Characteristics of an 8-Gbps SerDes in a 28nm CMOS Technology[J].ACTA ELECTRONICA SINICA,2022,50(11):2653-2658. DOI: 10.12263/DZXB.20211691.

  •  
  •  
icon
试读结束,您可以激活您的VIP账号继续阅读。
去激活 >
icon
试读结束,您可以通过登录账户,到个人中心,购买VIP会员阅读全文。
已是VIP会员?
去登录 >

0

Views

16

下载量

1

CSCD

Alert me when the article has been cited
提交
Tools
Download
Export Citation
Share
Add to favorites
Add to my album

Related Articles

No data

Related Author

Yi WEN
Jian-jun CHEN
Bin LIANG
Ya-qing CHI
Jun HUANG

Related Institution

College of Computer Science, National University of Defense Technology
0