W Band Active Phased Array Micro System Based on Silicon Three Dimensional Integration Technique

YANG Jia-peng; ZHOU Jun; CAO Zhi-xiang; MENG Hong-fu; SHEN Ya

doi:10.12263/DZXB.20220054

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W Band Active Phased Array Micro System Based on Silicon Three Dimensional Integration Technique

PAPERS | 更新时间：2025-12-08

- W Band Active Phased Array Micro System Based on Silicon Three Dimensional Integration Technique
- ACTA ELECTRONICA SINICA Vol. 51, Issue 8, Pages: 2160-2167(2023)
- 作者机构：
  
  1.南京国博电子股份有限公司，江苏南京 211111
  2.东南大学毫米波国家重点实验室，江苏南京 210096
- 作者简介：
- 基金信息：
  
  National Key S&T Special Projects(2018ZX03001012)
- DOI：10.12263/DZXB.20220054
  CLC： TN927.23;
- Received：10 January 2022，
  
  Revised：2022-06-26，
  
  Published：25 August 2023
- 稿件说明：
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杨驾鹏,周骏,曹志翔等.基于硅基三维集成技术的W频段有源相控阵微系统[J].电子学报,2023,51(08):2160-2167.

YANG Jia-peng,ZHOU Jun,CAO Zhi-xiang,et al.W Band Active Phased Array Micro System Based on Silicon Three Dimensional Integration Technique[J].ACTA ELECTRONICA SINICA,2023,51(08):2160-2167.
杨驾鹏,周骏,曹志翔等.基于硅基三维集成技术的W频段有源相控阵微系统[J].电子学报,2023,51(08):2160-2167. DOI： 10.12263/DZXB.20220054.

YANG Jia-peng,ZHOU Jun,CAO Zhi-xiang,et al.W Band Active Phased Array Micro System Based on Silicon Three Dimensional Integration Technique[J].ACTA ELECTRONICA SINICA,2023,51(08):2160-2167. DOI： 10.12263/DZXB.20220054.

摘要

本文基于硅基三维集成技术，提出了一种高集成度低剖面的W频段有源相控阵微系统.将阵列划分为若干个2×4单元的W频段相控阵子阵微系统.每个子阵微系统采用了三维布局封装结构，内部一体化集成了天线、有源芯片和无源网络等功能单元.以子阵微系统为基本单元，利用阵列扩展技术将8个子阵微系统拼接成为8×8单元的W频段有源相控阵阵列.设计了高耦合度低损耗的CPW共面波导（co-planar waveguide，CPW）传输线、基于TSV硅通孔（through silicon via， TSV）的准同轴垂直传输结构、基于微凸点的hot-via芯片接口等高频传输结构，解决了天线阵列到有源芯片的W频段信号层间传输难题.样机加工测试结果表明，92~96 GHz频率范围内，该相控阵阵列可实现二维波束快速扫描功能，扫描角达到

https://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=61159554&type=

https://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=61159550&type=

6.26533365

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，重量仅为85 g，剖面厚度仅为7.4 mm.

Abstract

Based on silicon three dimensional integration technique

a highly integrated W band active phased array micro system is proposed. The W band active phased array is divided into several 2×4 cell sub-array micro systems. The design of the sub-array micro system adopts three dimensional layout

in which antenna array

active chips and passive circuits are integrated in a single package. Then

eight sub-arrays are connected to fabricate a 8×8 W band active phased array using subarray microsystems as the basic unit. Several high performance W band transition structure are proposed

such as low cost co-planar waveguide (CPW) transmission line

quasi coaxial vertical transition using through silicon via (TSV) and hot-via connect using micro bump. These transition structure are used to solve the W band signal transition problem from active chips to antenna array. The measurement results show that this array can realize two-dimensional beam scanning across the frequency range of 92 to 96 GHz. The scanning angle reached ±40 degree. The weight is 85g and the section thickness is 7.4 mm.

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references

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