Interferer Rejection Design of a 6.5~10 GHz UWB Low Noise Amplifier

GAO Yu-fei; LEI Qian-qian; XU Hua; LIU Qi-hang; LI Lian-bi; FENG Song

doi:10.12263/DZXB.20220241

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Interferer Rejection Design of a 6.5~10 GHz UWB Low Noise Amplifier

PAPERS | 更新时间：2025-12-08

- Interferer Rejection Design of a 6.5~10 GHz UWB Low Noise Amplifier
- ACTA ELECTRONICA SINICA Vol. 51, Issue 7, Pages: 1970-1976(2023)
- 作者机构：
  
  1.西安工程大学理学院,陕西西安 710048
  2.射线柔性防护技术陕西省高校工程研究中心,陕西西安 710048
  3.深圳市纽瑞芯科技有限公司,广东深圳 518000
- 作者简介：
- 基金信息：
  
  National Key R&D Plan Project(2018YFB2200500)
- DOI：10.12263/DZXB.20220241
  CLC： TN722.3;
- Received：09 March 2022，
  
  Revised：2022-07-12，
  
  Published：25 July 2023
- 稿件说明：
移动端阅览
高宇飞,雷倩倩,徐化等.6.5~10 GHz超宽带低噪声放大器的抗干扰设计[J].电子学报,2023,51(07):1970-1976.

GAO Yu-fei,LEI Qian-qian,XU Hua,et al.Interferer Rejection Design of a 6.5~10 GHz UWB Low Noise Amplifier[J].ACTA ELECTRONICA SINICA,2023,51(07):1970-1976.
高宇飞,雷倩倩,徐化等.6.5~10 GHz超宽带低噪声放大器的抗干扰设计[J].电子学报,2023,51(07):1970-1976. DOI： 10.12263/DZXB.20220241.

GAO Yu-fei,LEI Qian-qian,XU Hua,et al.Interferer Rejection Design of a 6.5~10 GHz UWB Low Noise Amplifier[J].ACTA ELECTRONICA SINICA,2023,51(07):1970-1976. DOI： 10.12263/DZXB.20220241.

摘要

本文基于SMIC 28 nm CMOS工艺设计了一款应用于超宽带协议的具有带外噪声抑制功能的全集成低噪声放大器（Low Noise Amplifier，LNA），并提出了一种新型的LC串并联两级滤波结构.通过利用滤波器极点补偿LNA带内增益的设计方法，合理设计滤波负载等效电路的极点，使其略高于零点频率，在保证了LNA通带增益和噪声的情况下提高了滤波深度.对所设计的LNA进行了EMX建模及仿真验证.结果表明，该LNA在

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15.49400043

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的工作频带内，

高达

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20.31999969

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，

小于

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13.29266548

2.37066650

；

小于

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，带内噪声系数仅为

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17.18733406

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；带阻滤波器在

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10.66800022

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处可提供

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的噪声抑制；在

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6.94266701

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供电电压下，LNA的静态功耗仅为

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Abstract

In this paper

a fully integrated low noise amplifier (LNA) with interferer rejection (IR) for ultra wide band (UWB) protocol is designed based on SMIC 28 nm CMOS process. And a novel series and parallel LC two-stage filtering configuration is proposed. By using the poles of the filter to compensate the LNA gain

the pole of the equivalent circuit of the filtering load is designed properly. By setting the pole to be slightly higher than the zero

the filtering depth is optimized while the gain and noise of the LNA band keep unharmed. EMX modeling and simulation of the LNA are implemented

and the results show that the

of the LNA is 21.17 ~ 25.28 dB in the band of 6.5 ~ 10 GHz

and

are less than -10.58 dB and -11.20 dB respectively

the in-band noise figure is 2.14 ~ 2.51 dB. The notch filter achieves -35.45 dB IR ratio at 5.8 GHz. The static power consumption of LNA is only 9.36 mW under 0.9 V supply voltage.

关键词

Keywords

references

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