The Performance Improvement of Thin Film Bulk Acoustic Resonators by Frame Structure

WU Yong-le; WU Hao-peng; LAI Zhi-guo; CAI Xun; TANG Bin; YANG Qing-hua; YANG Yu-hao; WANG Wei-min

doi:10.12263/DZXB.20220346

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The Performance Improvement of Thin Film Bulk Acoustic Resonators by Frame Structure

PAPERS | 更新时间：2025-12-11

- The Performance Improvement of Thin Film Bulk Acoustic Resonators by Frame Structure
- ACTA ELECTRONICA SINICA Vol. 52, Issue 2, Pages: 407-413(2024)
- 作者机构：
  
  1.北京邮电大学集成电路学院,北京 100876
  2.北京邮电大学电子工程学院,北京 100876
  3.苏州汉天下电子有限公司,江苏苏州 215000
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China(U20A20203;61971052);Fundamental Research Funds for the Central Universities of Beijing University of Pets and Telecommunications(2021XD-A07-2);Key Research and Development Project of Guangdong Province(2020B0101080001)
- DOI：10.12263/DZXB.20220346
  CLC： TN385;
- Received：04 April 2022，
  
  Revised：2023-05-15，
  
  Published：25 February 2024
- 稿件说明：
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吴永乐,吴昊鹏,赖志国,等.框架结构对薄膜体声波谐振器性能提升的研究[J].电子学报,2024,52(02):407-413.

WU Yong-le, WU Hao-peng, LAI Zhi-guo, et al.The Performance Improvement of Thin Film Bulk Acoustic Resonators by Frame Structure[J].Acta Electronica Sinica, 2024, 52(02): 407-413.
吴永乐,吴昊鹏,赖志国,等.框架结构对薄膜体声波谐振器性能提升的研究[J].电子学报,2024,52(02):407-413. DOI：10.12263/DZXB.20220346

WU Yong-le, WU Hao-peng, LAI Zhi-guo, et al.The Performance Improvement of Thin Film Bulk Acoustic Resonators by Frame Structure[J].Acta Electronica Sinica, 2024, 52(02): 407-413. DOI：10.12263/DZXB.20220346

摘要

本文研究了框架结构（Frame）对薄膜体声波谐振器（Film Bulk Acoustic Resonator，FBAR）提升性能的作用，从两种Frame结构对体声波能量的反射匹配基础理论出发，针对其功能特点，以实验的方式确定了低频和高频多组框架微结构的组合，对多组FBAR进行了版图绘制以及光刻流片，最终通过片上测试得到了所有分组的谐振器性能．对测试得到的性能进行了分组统计筛选，从测试结果来看，经过优选之后的Frame结构分组无论是对低频还是高频FBAR谐振器都具有提升性能的作用．对低频（1.7 GHz附近）FBAR来说，并联谐振品质因数可以提升1 000以上．对高频（5.5 GHz附近）FBAR来说，并联谐振品质因数可以提升300以上．对横向寄生模式较强的高频FBAR，优选的Frame结构可以提升谐振器的横向寄生模式抑制，使串联谐振频率之下的阻抗相位波动减少5°以上．

Abstract

The effect of frame on the performance improvement of thin film bulk acoustic resonator(FBAR)is studied. Based on the basic theory of reflection and matching of two kinds of frame structures to keep acoustic energy

according to their functional characteristics

several groups of frame microstructure combinations of low frequency and high frequency are determined experimentally

and the two groups of FBAR are taped out. Finally

the resonator of all groups is obtained by on-wafer test. The selected frame structure group can improve the performance of both low-frequency and high-frequency FBAR. For low frequency (around 1.7 GHz) FBAR

the quality factor of parallel resonance can be increased by more than 1 000. For high frequency (around 5.5 GHz) FBAR

the quality factor of parallel resonance can be increased by more than 300. For the high frequency FBAR with strong transverse parasitic mode

the optimized frame structure can improve the transverse parasitic suppression and reduce the impedance phase fluctuation under the series resonant frequency by more than 5°.

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references

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