Study on the Silicon-on-Insulator Power Semiconductor Monolithic Integration Technology

ZHANG Long; LIU Si-yang; SUN Wei-feng; MA Jie; PAN Cheng-wu; HE Nai-long; ZHANG Sen; SU Wei

doi:10.12263/DZXB.20220492

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Study on the Silicon-on-Insulator Power Semiconductor Monolithic Integration Technology

SURVEYS AND REVIEWS | 更新时间：2025-12-08

- Study on the Silicon-on-Insulator Power Semiconductor Monolithic Integration Technology
- ACTA ELECTRONICA SINICA Vol. 51, Issue 2, Pages: 514-526(2023)
- 作者机构：
  
  1.东南大学国家ASIC工程研究中心，江苏南京 210096
  2.华润上华科技有限公司，江苏无锡 214061
- 作者简介：
- 基金信息：
- DOI：10.12263/DZXB.20220492
  CLC： TN433;TN305
- Received：05 May 2022，
  
  Revised：2022-11-07，
  
  Published：25 February 2023
- 稿件说明：
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张龙,刘斯扬,孙伟锋等.绝缘体上硅功率半导体单芯片集成技术[J].电子学报,2023,51(02):514-526.

ZHANG Long,LIU Si-yang,SUN Wei-feng,et al.Study on the Silicon-on-Insulator Power Semiconductor Monolithic Integration Technology[J].ACTA ELECTRONICA SINICA,2023,51(02):514-526.
张龙,刘斯扬,孙伟锋等.绝缘体上硅功率半导体单芯片集成技术[J].电子学报,2023,51(02):514-526. DOI： 10.12263/DZXB.20220492.

ZHANG Long,LIU Si-yang,SUN Wei-feng,et al.Study on the Silicon-on-Insulator Power Semiconductor Monolithic Integration Technology[J].ACTA ELECTRONICA SINICA,2023,51(02):514-526. DOI： 10.12263/DZXB.20220492.

摘要

利用单芯片集成技术制造的智能功率芯片具有体积小、寄生小、损耗低等方面的优势，其技术难度远高于传统的多芯片、单封装形式的智能功率模块.本文首先介绍了单片智能功率芯片的架构与技术需求；然后，探讨了绝缘体上硅功率半导体单芯片集成的工艺流程和器件类型；接着，总结了高压横向IGBT器件技术、续流二极管器件技术、LDMOS器件技术的特征和效果；此外，还讨论了单片智能功率芯片的相关可靠性问题，包括高压互连线效应和低温雪崩不稳定.本课题组在功率半导体集成型器件的电流能力、关断速度、短路承受能力、反向恢复峰值电流、安全工作区、高压互连线屏蔽、低温可靠性等关键特性优化或可靠性提升方面进行了自主创新，构建了基于绝缘体上硅的功率半导体单芯片集成技术，并成功研制了单片智能功率芯片.

Abstract

The intelligent power chip designed and manufactured based on the single-chip integration technology has the advantages of small size

small parasitic element and low loss. Its technical difficulty is much higher than the intelligent power module with multiple co-packaged chips. Firstly

this paper introduces the block diagram of the single-chip intelligent power chip and its technical requirements. Then

the process flow and device types of the silicon-on-insulator (SOI) power semiconductor single-chip integration technology are discussed. Then

the features and technical effect of the high-voltage lateral IGBT

freewheeling diode and LDMOS technologies are summarized. Additionally

the reliability of single-chip intelligent power chip is discussed

including high-voltage interconnection effect and low-temperature instability. The research group of this paper has made independent innovation in the optimization or reliability improvement of key characteristics of integrated power semiconductor devices

such as current capability

turn-off speed

short-circuit withstand capability

reverse recovery peak current

safe operation area

high-voltage interconnection shielding

low-temperature reliability and so on. We developed the power semiconductor single-chip integration technology based on SOI

and realized the localization of single-chip intelligent power chip.

关键词

Keywords

references

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