Study of Highly Reliable Gate Driver on Array Based on InGaZnO Thin Film Transistor

ZHOU Liu-fei; SHAO Xian-jie; CHEN Xu; WANG Hai-hong; WANG Bao-ping

doi:10.12263/DZXB.20220916

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Study of Highly Reliable Gate Driver on Array Based on InGaZnO Thin Film Transistor

PAPERS | 更新时间：2025-12-11

- Study of Highly Reliable Gate Driver on Array Based on InGaZnO Thin Film Transistor
- ACTA ELECTRONICA SINICA Vol. 50, Issue 12, Pages: 3014-3020(2022)
- 作者机构：
  
  1.东南大学电子科学与工程学院，江苏南京 210096
  2.南京京东方显示技术有限公司研发部，江苏南京 210033
- 作者简介：
- 基金信息：
- DOI：10.12263/DZXB.20220916
  CLC： TN321.5;
- Received：01 August 2022，
  
  Revised：2022-11-13，
  
  Published：25 December 2022
- 稿件说明：
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周刘飞,邵贤杰,陈旭等.高可靠性InGaZnO薄膜晶体管集成栅极驱动电路的研究[J].电子学报,2022,50(12):3014-3020.

ZHOU Liu-fei,SHAO Xian-jie,CHEN Xu,et al.Study of Highly Reliable Gate Driver on Array Based on InGaZnO Thin Film Transistor[J].ACTA ELECTRONICA SINICA,2022,50(12):3014-3020.
周刘飞,邵贤杰,陈旭等.高可靠性InGaZnO薄膜晶体管集成栅极驱动电路的研究[J].电子学报,2022,50(12):3014-3020. DOI： 10.12263/DZXB.20220916.

ZHOU Liu-fei,SHAO Xian-jie,CHEN Xu,et al.Study of Highly Reliable Gate Driver on Array Based on InGaZnO Thin Film Transistor[J].ACTA ELECTRONICA SINICA,2022,50(12):3014-3020. DOI： 10.12263/DZXB.20220916.

摘要

InGaZnO薄膜晶体管（InGaZnO Thin Film Transistor，IGZO TFT）具有高迁移率特性，易实现高分辨率且高刷新率的有源矩阵液晶显示（Liquid Crystal Displays，LCD）.然而，由于IGZO TFT长期运行后较严重的性能下降，集成栅极驱动电路（Gate Driver on Array，GOA）的使用寿命受到限制，这成为IGZO GOA在大尺寸LCD应用的一个关键障碍.本文提出一种具有双维持模块的高可靠性IGZO GOA电路，适用于大尺寸高分辨率LCD，其中维持电路产生的双极性脉冲偏压可以有效抑制IGZO TFT阈值电压（Threshold Voltage，

）漂移.详细分析了该GOA电路的工作原理，并进行了相关电学模拟.再者，表征了偏压温度应力下的TFT稳定性，以证明双极性脉冲偏压抑制

漂移的有效性.采用本文提出的新型GOA电路，制作了55英寸UHD（3 840 × 2 160）高分辨率LCD，具有5 mm窄边框特征，其中GOA电路仅占用1.47 mm.此外，信赖性测试中，该GOA电路在高温高湿（60 °C/90%）环境稳定工作1 000小时.这些结果表明本文

提出的IGZO GOA电路应用于大尺寸高分辨率LCD具有足够的可靠性.

Abstract

Due to the high mobility of InGaZnO thin-film transistor(IGZO TFT)

the active matrix liquid crystal display(LCD) using IGZO TFT is able to provide high resolution and high frame frequency. However

the lifetime of IGZO gate driver on array(GOA) is limited since the IGZO TFT usually suffers severe performance degradation after a long time operation

which comes to be a critical obstacle for GOA's application in large-sized LCDs. In this paper

a highly reliable IGZO GOA circuit with a dual low-level holding structure is proposed and fabricated for large-sized and high resolution LCD applications

in which bipolar pulse bias(BPB) is generated to suppress the threshold voltage(

) shift of IGZO TFT. The proposed GOA circuit can be divided into several units for different functions: pull-up control unit

pull up unit

pull down unit

low-level holding unit

and reset unit. The operation principle of the GOA is described in detail

and the related simulation is conducted. Then

bias temperature stress(BTS) measurements are performed to demonstrate the effectiveness of the BPB in suppressing the

shift. With this GOA

a 55-inch UHD(3 840 × 2 160) high resolution LCD panel with a 5 mm narrow bezel is achieved

in which the layout dimension of GOA circuit is only 1.47 mm. In addition

in a reliability test

the new GOA circuit operates stably at high temperature and high humidity(60 °C/90%) for 1000 h. These results can well prove that designed GOA has good enough reliability for large-sized and high resolution LCD.

关键词

Keywords

references

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