Modeling and Simulation Method of Radiation Effect of Analog-to-Digital Converter Based on VHDL-AMS

LIANG Bo; LIU Jin-hui; ZHANG Xiao-peng; TAN Wen-dan; ZHANG Xin-dan; LIU Gang

doi:10.12263/DZXB.20221049

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Modeling and Simulation Method of Radiation Effect of Analog-to-Digital Converter Based on VHDL-AMS

PAPERS | 更新时间：2025-12-08

- Modeling and Simulation Method of Radiation Effect of Analog-to-Digital Converter Based on VHDL-AMS
- ACTA ELECTRONICA SINICA Vol. 52, Issue 8, Pages: 2706-2717(2024)
- 作者机构：
  
  西安电子科技大学计算机科学与技术学院，陕西西安 710071
- 作者简介：
- 基金信息：
  
  The Special Fund of the State Key Laboratory of Intense Pulsed Radiation Simulation and Effect(SKLIPR2011)
- DOI：10.12263/DZXB.20221049
  CLC： TN402;TP39
- Received：14 September 2022，
  
  Revised：2023-08-28，
  
  Published：25 August 2024
- 稿件说明：
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梁博, 刘锦辉, 张晓鹏, 等. 基于VHDL-AMS的模数转换器辐射效应建模与仿真方法[J]. 电子学报, 2024, 52(08): 2706-2717.

LIANG Bo, LIU Jin-hui, ZHANG Xiao-peng, et al. Modeling and Simulation Method of Radiation Effect of Analog-to-Digital Converter Based on VHDL-AMS[J]. Acta Electronica Sinica, 2024, 52(08): 2706-2717.
梁博, 刘锦辉, 张晓鹏, 等. 基于VHDL-AMS的模数转换器辐射效应建模与仿真方法[J]. 电子学报, 2024, 52(08): 2706-2717. DOI：10.12263/DZXB.20221049

LIANG Bo, LIU Jin-hui, ZHANG Xiao-peng, et al. Modeling and Simulation Method of Radiation Effect of Analog-to-Digital Converter Based on VHDL-AMS[J]. Acta Electronica Sinica, 2024, 52(08): 2706-2717. DOI：10.12263/DZXB.20221049

摘要

模数转换器（Analog-to-Digital Converter，ADC）是连接模拟信号域与数字信号域的关键器件，而现有研究缺乏ADC辐照效应建模的相关内容.为满足大型模数混合信号系统辐照效应建模仿真的需要，本文提出了建立具有辐照效应的ADC行为级模型的方法.首先根据ADC的工作原理将其拆解为不同的通用模块，使用模拟和混合信号硬件描述语言（Very High speed integrated circuit hardware Description Language for Analog and Mixed Signals，VHDL-AMS）建立了各模块的行为级模型.接着根据基本原理将各模块动态组合为未辐照情况下基本的ADC模型.对于ADC的辐照效应，通过开展辐照试验，测量了ADC芯片HWD7710和SAD9434受总剂量（Total Ionizing Dose，TID）效应和中子辐射（Neutron Radiation，NR）效应影响的工作参数，并利用最小二乘法拟合获得ADC的工作参数与辐照剂量的关系式.最后根据辐照关系式，在基本模型上添加辐照参数模块，并建立两种不同结构ADC的TID与NR模型.通过仿真结果与试验数据对比，验证了所建ADC辐射效应模型的普适性和精度.模型的静态参数仿真结果与试验结果的相对偏差在5%以内，证明该方法支持对不同ADC及不同辐射效应进行辐照效应模型建模.

Abstract

The analog-to-digital converter (ADC)

a key component bridging the analog and digital signal domains

is critical to the interface between these domains. However

existing research falls short in providing comprehensive models that take into account radiation effects on ADCs. To address the demands of simulating radiation effects in large-scale mixed-signal systems

this paper presents a method for developing behavioral-level models of ADCs that embody radiation effects. The paper begins by dividing the ADC into its constituent generic modules based on its working principles

and establishing behavioral models for each module using the very high speed integrated circuit hardware description language for analog and mixed signals (VHDL-AMS). These modules are then dynamically assembled according to fundamental principles to form the baseline ADC model under non-irradiated conditions. To address the radiation effects on ADCs

irradiation experiments were conducted to quantify the performance parameters of two ADC chips

HWD7710 and SAD9434

under total ionizing dose (TID) and neutron radiation (NR) exposure. The operating parameters affected by these radiation effects were meticulously measured. Least squares regression was then used to derive equations correlating the functional parameters of the ADC with radiation dose. Finally

TID and NR models for two different structured ADCs were developed by incorporating radiation parameter modules into the basic model based on the radiation relation equations. The universality and accuracy of the constructed ADC radiation effect model was verified by comparing the simulated results with experimental data. The relative deviation between the static parameter simulation results and the experimental results was within 5%. The results show that this method supports the modeling of radiation effects for various ADCs and multiple radiation effects.

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references

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