Research on Terahertz Monolithic Integrated Power Amplifier Package

ZHANG Bo; ZHANG Yong; JIANG Wei-jia; LIU Guang-ru; XU Rui-min; YAN Bo

doi:10.12263/DZXB.20221317

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Research on Terahertz Monolithic Integrated Power Amplifier Package

THz metasuface technology and application | 更新时间：2025-12-08

- Research on Terahertz Monolithic Integrated Power Amplifier Package
- ACTA ELECTRONICA SINICA Vol. 51, Issue 10, Pages: 2724-2732(2023)
- 作者机构：
  
  电子科技大学电子科学与工程学院，四川成都 611731
- 作者简介：
- 基金信息：
  
  Science and Technology on Monolithic Integrated Circuits and Modules Laboratory(61428032204)
- DOI：10.12263/DZXB.20221317
  CLC： TN454;
- Received：16 November 2022，
  
  Revised：2023-09-11，
  
  Published：25 October 2023
- 稿件说明：
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张博,张勇,江伟佳等.太赫兹功率放大单片封装技术研究[J].电子学报,2023,51(10):2724-2732.

ZHANG Bo,ZHANG Yong,JIANG Wei-jia,et al.Research on Terahertz Monolithic Integrated Power Amplifier Package[J].ACTA ELECTRONICA SINICA,2023,51(10):2724-2732.
张博,张勇,江伟佳等.太赫兹功率放大单片封装技术研究[J].电子学报,2023,51(10):2724-2732. DOI： 10.12263/DZXB.20221317.

ZHANG Bo,ZHANG Yong,JIANG Wei-jia,et al.Research on Terahertz Monolithic Integrated Power Amplifier Package[J].ACTA ELECTRONICA SINICA,2023,51(10):2724-2732. DOI： 10.12263/DZXB.20221317.

摘要

本文对太赫兹功率放大单片封装技术进行研究，主要包括波导-微带垂直过渡和模块内的模式谐振抑制技术.不同于常规的矩形探针平面过渡，本文提出了一种基于分叉探针的垂直过渡结构，适用于多层电路排布的系统/模块封装，并在WR-4波导频段（170~260 GHz）进行了背靠背结构的实验验证，在整个波导频带内，回波损耗优于16 dB，单个过渡的插入损耗约0.42 dB，这包括了波导模块接触不良造成的额外的损耗.为进一步降低过渡损耗，提出了一种开口谐振环结构，用来抑制不良接触导致的电磁泄漏，使过渡损耗降低为原来的一半.此外，为避免功率放大模块内部发生模式谐振，提出将电磁带隙结构设置在平面传输线的上腔来抑制高次模的激励、传输和谐振.应用上述技术对工作于210~230 GHz的功率放大单片进行封装及测试.在210 GHz，小信号增益达到最大值20.75 dB，单端封装损耗约0.8 dB；在217 GHz达到最大输出功率15.6 dBm，与芯片手册数据吻合较好.

Abstract

In this paper

the packaging technique of terahertz monolithic integrated power amplifier is studied

i.e. waveguide-to-microstrip vertical transition and mode-resonance suppression techniques. Different from the conventional horizontal transition based on rectangular probes

a vertical transition based on a bifurcated probe is proposed

which is suitable for multilayer circuits. To verify the performance

a back-to-back transition is fabricated and measured. In the range of 170~260 GHz

the measured return loss is better than 16 dB

while the single insertion loss

including the loss caused by non-ideal metallic contact

is around 0.42 dB. To further reduce the transition loss

a resonance ring with a slot is proposed to avoid the electromagnetic leakage. As a result

the simulated insertion loss is reduced by half. Moreover

the issue of mode resonance in the amplifier cavity is studied

and electromagnetic band gap structures are set above the plane transmission line to suppress the excitation

transmission and resonance of higher modes. The above techniques are applied to a power amplifier which is operated at 210~230 GHz. In the measurement

the maximum small-signal gain of 20.75 dB and the single packaging loss of 0.8 dB are observed at 210 GHz. At 217 GHz

the maximum output power of higher than 15.6 dBm is achieved

which is consistent with the manual.

关键词

Keywords

references

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