Gate Width Influence on Subthreshold Swing of AlGaN/GaN HEMTs

JI Qi-zheng; LIU Jun; YANG Ming; MA Gui-lei; HU Xiao-feng; LIU Shang-he

doi:10.12263/DZXB.20230004

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Gate Width Influence on Subthreshold Swing of AlGaN/GaN HEMTs

PAPERS | 更新时间：2025-12-08

- Gate Width Influence on Subthreshold Swing of AlGaN/GaN HEMTs
- ACTA ELECTRONICA SINICA Vol. 51, Issue 6, Pages: 1486-1492(2023)
- 作者机构：
  
  1.陆军工程大学石家庄校区电磁环境效应重点实验室,河北石家庄 050003
  2.北京卫星环境工程研究所,北京 100094
  3.南京信息工程大学电子与信息工程学院,江苏南京 210044
  4.北京东方计量测试研究所,北京 100094
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China(61904007)
- DOI：10.12263/DZXB.20230004
  CLC： TN386.3;
- Received：27 December 2022，
  
  Revised：2023-02-09，
  
  Published：25 June 2023
- 稿件说明：
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季启政,刘峻,杨铭等.栅宽对AlGaN/GaN HEMTs亚阈值摆幅的影响[J].电子学报,2023,51(06):1486-1492.

JI Qi-zheng,LIU Jun,YANG Ming,et al.Gate Width Influence on Subthreshold Swing of AlGaN/GaN HEMTs[J].ACTA ELECTRONICA SINICA,2023,51(06):1486-1492.
季启政,刘峻,杨铭等.栅宽对AlGaN/GaN HEMTs亚阈值摆幅的影响[J].电子学报,2023,51(06):1486-1492. DOI： 10.12263/DZXB.20230004.

JI Qi-zheng,LIU Jun,YANG Ming,et al.Gate Width Influence on Subthreshold Swing of AlGaN/GaN HEMTs[J].ACTA ELECTRONICA SINICA,2023,51(06):1486-1492. DOI： 10.12263/DZXB.20230004.

摘要

制备了不同栅极宽度的AlGaN/GaN高电子迁移率晶体管，通过测量各器件电容-电压曲线和转移特性曲线，得到了栅沟道载流子输运特性以及亚阈值摆幅，结果显示当栅极宽度从10 μm增加到50 μm时，亚阈值摆幅下降了40.3%.定性且定量地分析了亚阈值摆幅值随栅极宽度变化的原因，发现不同的栅极宽度对应不同的极化散射强度，亚阈值摆幅的变化是由栅沟道载流子输运特性和极化散射效应造成的.为AlGaN/GaN高电子迁移率晶体管开关性能优化提供了新的视角与维度，将促进其更好地应用于无线通信、电力传输以及国防军工领域.

Abstract

AlGaN/GaN high electron mobility transistors (HEMTs) with different gate widths are prepared. The gate-channel carrier transport characteristics and the subthreshold swing (SS) are obtained by measuring the capacitance-voltage curve and transfer characteristic curve of each HEMT. The results show that the SS value decreases by 40.3% with gate width increasing from 10

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. The factors affecting the subthreshold swing variation are analyzed qualitatively and quantificationally. It is found that different gate widths correspond to different polarization scattering intensity

and the SS behavior results from gate-channel carrier transport characteristics and polarization scattering effect. This provides a new perspective and dimension for AlGaN/GaN HEMTs switching performance optimization

which will promote its better application in wireless communication

power transmission and defense industry.

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references

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