Package Test and Output Characteristics of GaN-Based Hetero Junction Structure Hall Sensors

MA Kai-ming; DAI Jian-xun; ZHANG Hui; DING Nan-nan; SUN Nan; SUN Zhong-hao; LIU Yan-hong; LIANG Yung C; HUANG Huo-lin

doi:10.12263/DZXB.20230262

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Package Test and Output Characteristics of GaN-Based Hetero Junction Structure Hall Sensors

PAPERS | 更新时间：2025-12-08

- Package Test and Output Characteristics of GaN-Based Hetero Junction Structure Hall Sensors
- ACTA ELECTRONICA SINICA Vol. 52, Issue 8, Pages: 2737-2745(2024)
- 作者机构：
  
  1.大连理工大学光电工程与仪器科学学院,辽宁大连 116024
  2.大连理工大学物理学院,辽宁大连 116024
  3.新加坡国立大学电气与计算机工程系,新加坡 119260
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China(61971090;62101093);Applied Basic Research Project of Liaoning Province, China(2022JH2/101300259);Dalian Science and Technology Innovation Fund, China(2022JJ12GX011)
- DOI：10.12263/DZXB.20230262
  CLC： TP212;
- Received：23 March 2023，
  
  Revised：2023-07-25，
  
  Published：25 August 2024
- 稿件说明：
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马凯鸣,代建勋,张卉,等. GaN基异质结霍尔传感器封装测试与输出特性[J]. 电子学报,2024,52(08):2737-2745.

MA Kai-ming, DAI Jian-xun, ZHANG Hui, et al. Package Test and Output Characteristics of GaN-Based Hetero Junction Structure Hall Sensors[J]. Acta Electronica Sinica, 2024, 52(08): 2737-2745.
马凯鸣,代建勋,张卉,等. GaN基异质结霍尔传感器封装测试与输出特性[J]. 电子学报,2024,52(08):2737-2745. DOI：10.12263/DZXB.20230262

MA Kai-ming, DAI Jian-xun, ZHANG Hui, et al. Package Test and Output Characteristics of GaN-Based Hetero Junction Structure Hall Sensors[J]. Acta Electronica Sinica, 2024, 52(08): 2737-2745. DOI：10.12263/DZXB.20230262

摘要

霍尔传感器作为磁传感领域最常用的传感器类型，在工业生产、汽车电子、航空航天以及生物医学等方面均有广泛应用.本文利用宽禁带氮化镓（GaN）半导体耐高温、高迁移率等优点，采用标准半导体芯片制造工艺研制出AlGaN/GaN异质结结构霍尔传感器.高温应用环境下的传感器要求封装材料耐高温、产生应力低以及对传感器关键指标影响小.本文通过软件仿真树脂橡胶类3种不同封装材料封装后对传感器及键合线的性能影响规律，并通过实验验证不同材料封装前后传感器灵敏度、失调电压、温漂系数等物理参量的变化，遴选出综合性能最优的、可在550 K高温环境下使用的封装材料.最终得到封装后的霍尔传感器失调电压在1.0 mA激励电流时小于115 μV，信号线性度在0~3.0 mA激励电流和0~1.0 T磁场测量范围内优于0.3%，而温漂系数在300~550 K温度范围内仅有-120.9 ppm/K，优于目前文献报道结果，因此有望应用于极端环境磁场检测中.

Abstract

As the most commonly used sensor type in the field of magnetic sensing

Hall sensors have been widely used in industrial production

automotive electronics

aerospace

biomedicine and many other fields. In this work

the AlGaN/GaN heterojunction Hall sensor was developed by using the standard semiconductor chip manufacturing process

taking advantage of the high temperature tolerance and high mobility of wide-bandgap GaN semiconductor. The sensor in high temperature application environment requires the packaging material to resist high temperature

produce low stress and have little impact on the key indicators of the device. In this work

the influence mechanism of three different packaging materials on the performance of the sensor and the bonding wire is simulated

the changes of sensor sensitivity

offset voltage

temperature drift coefficient and other physical parameters before and after packaging with different packaging materials are verified by experiments. Finally

the packaging material with the best comprehensive performance and can be used in 550 K high temperature environment is selected. The offset voltage of the final packaged Hall sensor is less than 115 μV when the excitation current is kept at 1.0 mA

and the signal linearity is better than 0.3% in the range of 0~3.0 mA input current and 0~1.0 T magnetic field. The temperature drift coefficient is only -120.9 ppm/K in the temperature range of 300~550 K

which is better than the results reported in the literatures. The fabricated Hall sensor is expected to be applied in the magnetic field detection in extreme environments.

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