Highly Reliable Gate Driver on Array Circuit Using Time-Division Driving Method Base on IGZO Thin Film Transistor

ZHOU Liu-fei; SHAO Xian-jie; WANG Hai-hong; WANG Bao-ping

doi:10.12263/DZXB.20230367

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Highly Reliable Gate Driver on Array Circuit Using Time-Division Driving Method Base on IGZO Thin Film Transistor

PAPERS | 更新时间：2025-12-11

- Highly Reliable Gate Driver on Array Circuit Using Time-Division Driving Method Base on IGZO Thin Film Transistor
- ACTA ELECTRONICA SINICA Vol. 51, Issue 12, Pages: 3463-3472(2023)
- 作者机构：
  
  1.东南大学电子科学与工程学院，江苏南京 210096
  2.南京京东方显示技术有限公司研发部，江苏南京 210033
- 作者简介：
- 基金信息：
- DOI：10.12263/DZXB.20230367
  CLC： TN321.5;
- Received：21 April 2023，
  
  Revised：2023-09-23，
  
  Published：25 December 2023
- 稿件说明：
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周刘飞,邵贤杰,王海宏等.基于IGZO薄膜晶体管的高可靠性时分驱动GOA电路[J].电子学报,2023,51(12):3463-3472.

ZHOU Liu-fei,SHAO Xian-jie,WANG Hai-hong,et al.Highly Reliable Gate Driver on Array Circuit Using Time-Division Driving Method Base on IGZO Thin Film Transistor[J].ACTA ELECTRONICA SINICA,2023,51(12):3463-3472.
周刘飞,邵贤杰,王海宏等.基于IGZO薄膜晶体管的高可靠性时分驱动GOA电路[J].电子学报,2023,51(12):3463-3472. DOI： 10.12263/DZXB.20230367.

ZHOU Liu-fei,SHAO Xian-jie,WANG Hai-hong,et al.Highly Reliable Gate Driver on Array Circuit Using Time-Division Driving Method Base on IGZO Thin Film Transistor[J].ACTA ELECTRONICA SINICA,2023,51(12):3463-3472. DOI： 10.12263/DZXB.20230367.

摘要

本文提出一种新颖的基于IGZO（Indium Gallium Zinc Oxide）薄膜晶体管的双向扫描集成栅极驱动（Gate Driver on Array，GOA）电路，特别适用于in-cell触控显示.本文提出的GOA电路采用时分驱动方式（Time-Division Driving Method，TDDM）实现高报点率的in-cell触控，并防止触控信号失真.该GOA电路支持扫描-暂停-重启模式，即输出几十个连续的显示寻址扫描脉冲后，栅极驱动输出暂停以执行触控侦测.在触控侦测期间，GOA电路中的Touch控制单元开始工作，使所有栅极输出低电位以消除显示驱动信号对触控的干扰.此外，本文提出的GOA电路采用双低电平维持（Low Level Maintaining，LLM）模块，能有效抑制LLM晶体管的阈值电压漂移.电学模拟结果表明，本文提出的GOA电路无论工作于正向还是反向扫描，均能产生均匀的输出波形，并且停坑级的输出波形与正常级波形一致.采用IGZO晶体管制作了10.4英寸in-cell触控显示面板以验证本文提出的GOA电路，支持90 Hz显示刷新率与180 Hz触控报点率.此外，借助工艺与设计优化，进一步提高GOA电路在恶劣环境下的使用寿命，成功通过高温高湿（85 ℃/85%）操作500 h的可靠性测试.

Abstract

This paper presents a novel bidirectional gate driver on array (GOA) circuit based on IGZO (

Indium Gallium Zinc Oxide) thin film transistor (TFT)

especially for use in in-cell touch displays. The proposed GOA circuit exploits the time-division driving method (TDDM) to implement the in-cell touch panels with a high report rate and prevent the distortion of touch signals. This GOA circuit can operate in a scanning-pausing-restarting mode

i.e.

after outputting dozens of continuous scanning pulses of display addressing

the gate driver outputs pause for touch sensing periods. During the time interval for touch operation

touch control unit of proposed GOA is started to work

so that all gate lines will output low potential in order to eliminate interferences from display driving signals. Moreover

the proposed GOA utilizes dual low-level maintaining (LLM) units to suppress threshold voltage shift of LLM TFTs. The operation principle of the GOA is described in detail. The simulated results illustrate that the proposed GOA circuit generates uniform output waveforms regardless of whether the circuit operates in forward or backward scanning

and output waveform in touch holding stage is almost identical to that in normal stage. We fabricated

https://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=62820086&type=

2.28600001

https://html.publish.founderss.cn/rc-pub/api/common/picture?pictureId=62820112&type=

5.58799982

inches in-cell touch display panel using IGZO TFT to assess the proposed GOA

and 90 Hz display with 180 Hz touch reporting rate can be perfectly supported. Moreover

the lifetime of GOA circuit under harsh environment is further improved with process and design optimization

the reliability test such as operation at high temperature and humidity (85 ℃/

85%) 500 hours has been successfully passed.

关键词

Keywords

references

JUN J H , KIM B J , SHIN S K , et al . In-cell self-capacitive-type mobile touch system and embedded readout circuit in display driver IC [J ] . Journal of Display Technology , 2016 , 12 ( 12 ): 1613 - 1622 .

KIM H , MIN B W . Automotive electromagnetic compatibility standard specific pulse driving method for advanced in-cell touch sensor [J ] . IEEE Sensors Journal , 2021 , 21 ( 6 ): 7825 - 7832 .

OUYANG C L , LIU D , HE K , et al . Recent advances in touch sensors for flexible displays [J ] . IEEE Open Journal of Nanotechnology , 2023 , 4 : 36 - 46 .

LEE Y J , KIM S Y , LEE S Y . Display device with integrated touch screen and method of driving the same : US20140320427 [P ] . 2014-10-30 .

KIM C , LEE D S , KIM J H , et al . 60.2: Invited paper: Advanced In-cell touch technology for large sized liquid crystal displays [J ] . SID Symposium Digest of Technical Papers , 2015 , 46 ( 1 ): 895 - 898 .

ZHENG G T , LIU P T , DU C H , et al . High-reliability gate driver on array using noise sharing of precharging node for thin film transistor-liquid crystal display application [J ] . Journal of the Society for Information Display , 2020 , 28 ( 12 ): 965 - 978 .

IWASE Y , TAGAWA A , TAKEUCHI Y , et al . 53-1: Distinguished Student Paper: A novel low power gate driver architecture for large 8K 120Hz LCD display employing IGZO technology [J ] . SID Symposium Digest of Technical Papers , 2018 , 49 ( 1 ): 698 - 701 .

KIM J S , BYUN J W , JANG J H , et al . A high-reliability carry-free gate driver for flexible displays using a-IGZO TFTs [J ] . IEEE Transactions on Electron Devices , 2018 , 65 ( 8 ): 3269 - 3276 .

OH J , JUNG K M , JUNG E K , et al . Novel driving methods of gate driver for enhancement- and depletion-mode oxide TFTs [J ] . IEEE Journal of the Electron Devices Society , 2020 , 8 : 67 - 73 .

CHEN F H , CHANG C H , TU C D , et al . 9-4: Simple gate driver circuit with inserted stage for In-cell touch TFT-LCD applications [J ] . SID Symposium Digest of Technical Papers , 2017 , 48 ( 1 ): 105 - 107 .

SEO J , NAM H . Low power and low noise shift register for In-cell touch display applications [J ] . IEEE Journal of the Electron Devices Society , 2018 , 6 : 726 - 732 .

CHO S W , SO B S , CHO Y S , et al . 9-2: Integrated a-Si gate driver for touchscreen technology known as AIT [J ] . SID Symposium Digest of Technical Papers , 2017 , 48 ( 1 ): 98 - 101 .

MOON S H , HARUHISA I , KIM K , et al . Highly robust integrated gate-driver for In-cell touch TFT-LCD driven in time division driving method [J ] . Journal of Display Technology , 2016 , 12 ( 5 ): 435 - 441 .

LIN C L , DENG M Y , WU C E , et al . Gate driver circuit using pre-charge structure and time-division multiplexing driving scheme for active-matrix LCDs integrated with In-cell touch structures [J ] . Journal of Display Technology , 2016 , 12 ( 11 ): 1238 - 1241 .

LIN C L , LAI P C , LAI P C , et al . Bidirectional gate driver circuit using recharging and time-division driving scheme for In-cell touch LCDs [J ] . IEEE Transactions on Industrial Electronics , 2018 , 65 ( 4 ): 3585 - 3591 .

LIN C L , LAI P C , LEE P T , et al . Highly reliable a-Si: H TFT gate driver with precharging structure for In-cell touch AMLCD applications [J ] . IEEE Transactions on Electron Devices , 2019 , 66 ( 4 ): 1789 - 1796 .

SHEN S , LIAO C W , YANG J W , et al . Capacitor reused gate driver for compact In-cell touch displays [J ] . IEEE Journal of the Electron Devices Society , 2021 , 9 : 533 - 538 .

LIN C L , WU C E , CHEN F H , et al . Highly reliable bidirectional a-InGaZnO thin-film transistor gate driver circuit for high-resolution displays [J ] . IEEE Transactions on Electron Devices , 2016 , 63 ( 6 ): 2405 - 2411 .

ZHU Y , HE Y L , JIANG S S , et al . Indium-gallium-zinc-oxide thin-film transistors: Materials, devices, and applications [J ] . Journal of Semiconductors , 2021 , 42 ( 3 ): 031101 .

KIM H J , PARK K , KIM H J . High-performance vacuum-processed metal oxide thin-film transistors: A review of recent developments [J ] . Journal of the Society for Information Display , 2020 , 28 ( 7 ): 591 - 622 .

SHIAH Y S , SIM K , SHI Y H , et al . Mobility-stability trade-off in oxide thin-film transistors [J ] . Nature Electronics , 2021 , 4 ( 11 ): 800 - 807 .

MARTINS J , BAHUBALINDRUNI P , ROVISCO A , et al . Bias stress and temperature impact on InGaZnO TFTs and circuits [J ] . Materials , 2017 , 10 ( 6 ): 680 .

SHAO J J , SU W C , CHANG T C , et al . Abnormal threshold voltage shift caused by trapped holes under hot-carrier stress in a-IGZO TFTs [J ] . Journal of Physics D: Applied Physics , 2020 , 53 ( 8 ): 085104 .

ZHOU Y H , LIU F Y , YANG H A , et al . Competition between heating and cooling during dynamic self-heating degradation of amorphous InGaZnO thin-film transistors [J ] . Solid-State Electronics , 2022 , 195 : 108393 .

KIM J H , OH J , PARK K , et al . IGZO TFT gate driver circuit with improved output pulse [J ] . IEEE Journal of the Electron Devices Society , 2018 , 7 : 309 - 314 .

XUE Y , WANG L J , ZHANG Y , et al . 31-inch 4K flexible display employing gate driver with metal oxide thin-film transistors [J ] . IEEE Electron Device Letters , 2021 , 42 ( 2 ): 188 - 191 .

SHIN H J , KIM T W . Ultra-high-image-density, large-size organic light-emitting device panels based on highly reliable gate driver circuits integrated by using InGaZnO thin-film transistors [J ] . IEEE Journal of the Electron Devices Society , 2019 , 7 : 1109 - 1113 .

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