Millimeter-Wave On-Chip Dual-Mode Transmission Line with Low Insertion Loss and Wide Band Based on Composite Right-/ Left-Handed Theory

SHEN Guang-xu; ZHANG Chen-yang; FENG Wen-jie; XU Feng; CHE Wen-quan

doi:10.12263/DZXB.20230511

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Millimeter-Wave On-Chip Dual-Mode Transmission Line with Low Insertion Loss and Wide Band Based on Composite Right-/ Left-Handed Theory

PAPERS | 更新时间：2025-12-08

- Millimeter-Wave On-Chip Dual-Mode Transmission Line with Low Insertion Loss and Wide Band Based on Composite Right-/ Left-Handed Theory
- ACTA ELECTRONICA SINICA Vol. 52, Issue 8, Pages: 2641-2647(2024)
- 作者机构：
  
  1.南京邮电大学电子与光学工程学院，江苏南京 210042
  2.华南理工大学电子与信息学院，广东广州 510641
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China(62001244;62231014;61931009);Natural Science Foundation of Jiangsu Province for Youth(BK20200742)
- DOI：10.12263/DZXB.20230511
  CLC： TN61;TN811
- Received：08 June 2023，
  
  Revised：2023-10-07，
  
  Published：25 August 2024
- 稿件说明：
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沈光煦, 章晨扬, 冯文杰, 等. 基于复合左右手理论的双模态低损耗宽带毫米波片上传输线[J]. 电子学报, 2024, 52(08): 2641-2647.

SHEN Guang-xu, ZHANG Chen-yang, FENG Wen-jie, et al. Millimeter-Wave On-Chip Dual-Mode Transmission Line with Low Insertion Loss and Wide Band Based on Composite Right-/ Left-Handed Theory[J]. Acta Electronica Sinica, 2024, 52(08): 2641-2647.
沈光煦, 章晨扬, 冯文杰, 等. 基于复合左右手理论的双模态低损耗宽带毫米波片上传输线[J]. 电子学报, 2024, 52(08): 2641-2647. DOI：10.12263/DZXB.20230511

SHEN Guang-xu, ZHANG Chen-yang, FENG Wen-jie, et al. Millimeter-Wave On-Chip Dual-Mode Transmission Line with Low Insertion Loss and Wide Band Based on Composite Right-/ Left-Handed Theory[J]. Acta Electronica Sinica, 2024, 52(08): 2641-2647. DOI：10.12263/DZXB.20230511

摘要

本文提出了一种基于复合左右手（Composite Right-/Left-Handed，CRLH）理论的双模态毫米波片上传输线（Transmission Line，TL），有效兼顾了宽频段和低损耗特性，并且同时包含支持前向波的右手频段和支持后向波的左手频段.为解决毫米波半导体衬底高损耗、高寄生干扰的问题，本文首先提出T型片上CRLH单元，通过研究CRLH传输线的电路拓扑与结构实现，减小了传输损耗并展宽带宽.此外，文章通过研究色散特性实现左手和右手通带两种模态.基于砷化镓（GaAs）基集成无源器件（Integrated Passive Device，IPD）工艺，加工并实测了一款工作频段覆盖18~44.5 GHz的3阶周期CRLH TL.本文提出的传输线尺寸紧凑，为1.3 mm × 0.55 mm，带有GSG（Ground Signal Ground）焊盘，最小插入损耗为1.18 dB，3 dB相对带宽超过90%.该测试结果表明所提出的片上传输线可广泛应用于实现独特电磁相位特性的片上功能电路和系统.

Abstract

This article proposes a dual-mode millimeter-wave on-chip transmission line (TL) based on the composite right-/left-handed (CRLH) theory

featuring both wide bandwidth and low loss. In addition

both the right-handed (RH) band supporting the forward waves and the left-handed (LH) band supporting backward waves are realized. To address the issues of high loss and high parasitic effect in millimeter-wave range and on semi-conductor substrate

a T-type CRLH on-chip unit cell is proposed. To further reduce the transmission loss and extend the bandwidth

the circuit topology and structural realization are investigated. In addition

dual modes including the RH and LH bands are realized by analyzing the dispersion curve of the CRLH transmission line. Based on Gallium Arsenide (GaAs)-based integrated passive device (IPD) technology

a 3rd-order periodic CRLH TL ranging from 18~44.5 GHz was fabricated and measured. The proposed transmission line features a compact size of 1.3 mm × 0.55 mm including GSG (Ground Signal Ground) pads

a minimum insertion loss of 1.18 dB

and a 3 dB fractional bandwidth exceeding 90%. These measurement results demonstrate that the proposed on-chip transmission line can be widely applied in on-chip functional circuits and systems for unique electromagnetic phase characteristics.

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references

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