Design of a Millimeter-Wave Dual-Band Low Phase Noise VCO in 45 nm CMOS SOI Process

CHEN Zhe; WANG Pin-qing; ZHOU Pei-gen; CHEN Ji-xin; HONG Wei

doi:10.12263/DZXB.20230645

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Design of a Millimeter-Wave Dual-Band Low Phase Noise VCO in 45 nm CMOS SOI Process

PAPERS | 更新时间：2025-12-24

- Design of a Millimeter-Wave Dual-Band Low Phase Noise VCO in 45 nm CMOS SOI Process
- ACTA ELECTRONICA SINICA Vol. 52, Issue 7, Pages: 2161-2169(2024)
- 作者机构：
  
  东南大学毫米波全国重点实验室，江苏南京 211111
- 作者简介：
- 基金信息：
  
  National Key Research and Development Program of China(2020YFB1804904);National Natural Science Foundation of China(62188102;62171128)
- DOI：10.12263/DZXB.20230645
  CLC： TN402;TN722.3
- Received：11 July 2023，
  
  Revised：2024-01-18，
  
  Published：25 July 2024
- 稿件说明：
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陈喆, 王品清, 周培根, 等. 基于45 nm CMOS SOI工艺的毫米波双频段低相噪压控振荡器设计[J]. 电子学报, 2024, 52(07): 2161-2169.

CHEN Zhe, WANG Pin-qing, ZHOU Pei-gen, et al. Design of a Millimeter-Wave Dual-Band Low Phase Noise VCO in 45 nm CMOS SOI Process[J]. Acta Electronica Sinica, 2024, 52(07): 2161-2169.
陈喆, 王品清, 周培根, 等. 基于45 nm CMOS SOI工艺的毫米波双频段低相噪压控振荡器设计[J]. 电子学报, 2024, 52(07): 2161-2169. DOI：10.12263/DZXB.20230645

CHEN Zhe, WANG Pin-qing, ZHOU Pei-gen, et al. Design of a Millimeter-Wave Dual-Band Low Phase Noise VCO in 45 nm CMOS SOI Process[J]. Acta Electronica Sinica, 2024, 52(07): 2161-2169. DOI：10.12263/DZXB.20230645

摘要

本文基于45 nm互补金属氧化物半导体绝缘体上硅工艺（Complementary Metal Oxide Semiconductor Silicon On Insulator，CMOS SOI）设计了一款支持5G毫米波24.25~27.5 GHz和37~43.5 GHz双频段的低相位噪声压控振荡器（Voltage Controlled Oscillator，VCO）.基于CMOS SOI工艺良好的晶体管开关特性，结合开关电容阵列及开关电感方案，提高宽带调谐电容、电感

值，扩展VCO工作频段，降低相位噪声.同时，输出匹配网络也采用开关电容切换方式，实现了5G毫米波双频段良好阻抗匹配及稳定功率输出.流片测试结果表明该VCO可以完整覆盖5G毫米波双频段24.25~27.5 GHz和37~43.5 GHz，低频段输出功率-4.8~0 dBm，高频段输出功率-6.4~-2.3 dBm.在24.482 GHz载频，1 MHz频偏处的相位噪声为-105.1 dBc/Hz；在43.308 GHz载频，1 MHz频偏处的相位噪声为-95.3 dBc/Hz.VCO核心直流功耗15.3~18.5 mW，电路核心面积为0.198 mm

.低频段（高频段）的FoM（Figure of Merit）及FoM

优值分别达到-181.3 dBc/Hz（-175.4 dBc/Hz）、-194.3 dBc/Hz（-188.3 dBc/Hz）.

Abstract

This paper presents the design of a millimeter-wave dual-band low phase noise voltage-controlled-oscillator in 45 nm CMOS SOI (Complementary Metal Oxide Semiconductor Silicon On Insulator) process

which covers bands of 24.25~27.5 GHz and 37

~43.5 GHz for 5G millimeter-wave communications. Based on the transistor’s high performance as the RF switch in SOI process

the switched cap-bank and switched inductor topology are proposed in this paper

to enhance the quality factor

for the wide-band tuning inductance and capacitance

increase the VCO (Voltage Controlled Oscillator) operating bandwidth

and lower the phase noise performance. Meanwhile

the switched capacitor is also adopted in the output matching network for good matching and stable output power in dual-bands. Measured results show that the designed VCO covers the bands of 24.25~27.5 GHz and 37~43.5 GHz for 5G millimeter-wave communication standards as in WRC-19

with output power of -4.8~0 dBm in low band and -6.4~-2.3 dBm in high band. The measured phase noise is -105.1 ‍dBc/Hz@1 MHz offset for the 24.482 GHz carrier

and -95.3 dBc/Hz@1 MHz offset for the 43.308 GHz carrier. The DC power consumption for the core circuit is 15.3~18.5 mW

and the core area is 0.198 mm

. The corresponding FoM (Figure of Merit) and FoM

for low (high) band is -181.3 dBc/Hz (-175.4 dBc/Hz)

and -194.3 dBc/Hz (-188.3 dBc/Hz)

respectively.

关键词

Keywords

references

MARCUS M J . ITU WRC-19 spectrum policy results [J ] . IEEE Wireless Communications , 2019 , 26 ( 6 ): 4 - 5 .

齐贺飞 , 王磊 , 王鑫 , 等 . 一种基于CMOS工艺的低相噪压控振荡器的设计 [J ] . 现代信息科技 , 2022 , 6 ( 12 ): 52 - 55 .

QI H F , WANG L , WANG X , et al . Design of a low phase noise voltage controlled oscillator based on CMOS process [J ] . Modern Information Technology , 2022 , 6 ( 12 ): 52 - 55 . (in Chinese)

王敏 , 谢生 , 毛陆虹 , 等 . 一种宽调谐范围的毫米波LC压控振荡器设计 [J ] . 南京大学学报(自然科学) , 2020 , 56 ( 1 ): 151 - 157 .

WANG M , XIE S , MAO L H , et al . Design of a mm-wave LC VCO with a wide tuning range [J ] . Journal of Nanjing University (Natural Science) , 2020 , 56 ( 1 ): 151 - 157 . (in Chinese)

尹佐韬 , 曹倩云 , 黄同德 , 等 . 16.3~19.3GHz压控振荡器设计 [C ] // 2021年全国微波毫米波会议论文集 . 北京 : 中国电子学会微波分会 , 2021 : 1 - 3 .

曹帅 , 程国枭 , 黄同德 , 等 . 基于130nm COMS工艺 X 波段压控振荡器设计 [C ] // 2022年全国微波毫米波会议论文集 . 北京 : 中国电子学会微波分会 , 2022 : 1 - 3 .

ZHANG R , CHEN Z , LI Z K , et al . A wide tuning range low-phase-noise Ku/Ka dual bands SiGe VCO based on transformer-coupled tank [J ] . IEEE Microwave and Wireless Components Letters , 2022 , 32 ( 5 ): 437 - 440 .

VIGILANTE M , REYNAERT P . A dual-band E-band quadrature VCO with switched coupled transformers in 28nm HPM bulk CMOS [C ] // 2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) . Piscataway : IEEE , 2015 : 119 - 122 .

DEMIRKAN M , BRUSS S P , SPENCER R R . Design of wide tuning-range CMOS VCOs using switched coupled-inductors [J ] . IEEE Journal of Solid-State Circuits , 2008 , 43 ( 5 ): 1156 - 1163 .

CHEN Z , CHEN J X , YAN P P , et al . K-band low phase noise VCO based on Q-boosted switched inductor [J ] . Electronics , 2019 , 8 ( 10 ): 1132 .

YOU P L , HUANG T H . A switched inductor topology using a switchable artificial grounded metal guard ring for wide-ftr mmW VCO applications [J ] . IEEE Transactions on Electron Devices , 2013 , 60 ( 2 ): 759 - 766 .

AGARWAL P , SAH S P , MOLAVI R , et al . Switched substrate-shield-based low-loss CMOS inductors for wide tuning range VCOs [J ] . IEEE Transactions on Microwave Theory and Techniques , 2017 , 65 ( 8 ): 2964 - 2976 .

帅陈杨 , 付云起 , 郑月军 , 等 . GeTe相变射频开关综述 [J ] . 电子学报 , 2022 , 50 ( 12 ): 3054 - 3072 .

SHUAI C Y , FU Y Q , ZHENG Y J , et al . Review of GeTe phase-change RF switches [J ] . Acta Electronica Sinica , 2022 , 50 ( 12 ): 3054 - 3072 . (in Chinese)

HUO Y M , DONG X D , LI L M , et al . 26/40 GHz CMOS VCOs design of radio front-end for 5G mobile devices‍ [C ] // 2016 IEEE International Conference on Ubiquitous Wireless Broadband (ICUWB) . Piscataway : IEEE , 2016 : 1 - 4 .

WANG R M , LI J G , SHI C Q , et al . A 25-37GHz VCO employing stacked-coupled switched inductor and co-tuned buffer in 55nm CMOS for multi-band 5G mmW applications [C ] // 2021 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) . Piscataway : IEEE , 2021 : 37 - 39 .

CHAHARDORI M , HOQUE M A , MOKRI M ALI , et al . A compact mm-wave multi-band VCO based on triple-mode resonator for 5G and beyond [C ] // 2022 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) . Piscataway : IEEE , 2022 : 156 - 158 .

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