Optimization and Capacitance Characteristics of 1 500 V Super Junction Power MOS Devices

CHONG Yi-ning; LI Jue; QIAO Ming

doi:10.12263/DZXB.20230845

您当前的位置：

首页 >

文章列表页 >

Optimization and Capacitance Characteristics of 1 500 V Super Junction Power MOS Devices

PAPERS | 更新时间：2025-12-24

- Optimization and Capacitance Characteristics of 1 500 V Super Junction Power MOS Devices
- ACTA ELECTRONICA SINICA Vol. 52, Issue 7, Pages: 2271-2278(2024)
- 作者机构：
  
  1.电子科技大学电子薄膜与集成器件全国重点实验室,四川成都 611731
  2.电子科技大学广东电子信息工程研究院,广东东莞 523950
  3.电子科技大学(深圳)高等研究院,广东深圳 518110
- 作者简介：
- 基金信息：
  
  Guangdong Provincial Foundation for Basic and Applied Basic Research(2021B1515020031);National Natural Science Foundation of China(62174024);Aeronautical Science Foundation of China(201943080002)
- DOI：10.12263/DZXB.20230845
  CLC： TN323.4;
- Received：07 September 2023，
  
  Revised：2023-11-25，
  
  Published：25 July 2024
- 稿件说明：
移动端阅览
种一宁, 李珏, 乔明. 1 500 V超结功率MOS器件优化与电容特性研究[J]. 电子学报, 2024, 52(07): 2271-2278.

CHONG Yi-ning, LI Jue, QIAO Ming. Optimization and Capacitance Characteristics of 1 500 V Super Junction Power MOS Devices[J]. Acta Electronica Sinica, 2024, 52(07): 2271-2278.
种一宁, 李珏, 乔明. 1 500 V超结功率MOS器件优化与电容特性研究[J]. 电子学报, 2024, 52(07): 2271-2278. DOI：10.12263/DZXB.20230845

CHONG Yi-ning, LI Jue, QIAO Ming. Optimization and Capacitance Characteristics of 1 500 V Super Junction Power MOS Devices[J]. Acta Electronica Sinica, 2024, 52(07): 2271-2278. DOI：10.12263/DZXB.20230845

摘要

本文利用半超结结构进行高压超结功率金属氧化物半导体（Metal Oxide Semiconductor，MOS）器件的设计，基于Sentaurus TCAD（Technology Computer Aided Design）仿真平台设计超结元胞结构并优化高压超结功率MOS器件的击穿电压与导通电阻，随后探究了寄生电容的特性.最后，基于多次外延工艺自主设计出一款器件结构仿真击穿电压1 658 V、工艺仿真击穿电压1 598 V、比导通电阻

值303 mΩ·cm

的高压超结功率MOS器件，与相同耐压值器件相比，比导通电阻值下降约50%.同时探究了超结掺杂浓度与厚度以及电压支持层掺杂浓度与厚度4个主要结构参数对器件寄生电容特性的影响.

Abstract

In this paper

the design of high-voltage super junction power MOS (Metal Oxide Semiconductor) device is carried out by using the semi-super junction structure

the super junction cell structure is designed based on the Sentaurus TCAD (Technology Computer Aided Design) simulation platform

and the breakdown voltage and on-resistance of the high-voltage super junction power MOS devices are optimized

and then the characteristics of parasitic capacitance are explored. Finally

based on multiple epitaxial processes

a high-voltage super junction power MOS device with a simulated breakdown voltage of 1 658 V

a process simulation breakdown voltage of 1 598 V and a specific on-resistance value of 303 mΩ·cm

has been independently designed

which reduced the specific on-resistance value by about 50% compared with the same withstand voltage device. At the same time

the influence of four main structural parameters

namely super junction doping concentration and thickness and voltage support layer doping concentration and thickness

on the parasitic capacitance characteristics of the device has been explored.

关键词

Keywords

references

HU C M . Optimum doping profile for minimum ohmic resistance and high-breakdown voltage [J ] . IEEE Transactions on Electron Devices , 1979 , 26 ( 3 ): 243 - 244 .

CHEN X B . Semiconductor power devices with alternating conductivity type high-voltage breakdown regions : US5216275 [P ] . 1993-06-01 .

KANG H , FINDLAY E M , UDREA F . Mechanisms of asymmetrical turn-on and turn-off and the origin of dynamic CGD hysteresis for hard-switching superjunction MOSFETs [J ] . IEEE Transactions on Electron Devices , 2020 , 67 ( 6 ): 2478 - 2481 .

吝晓楠 , 吴团庄 , 许超奇 , 等 . 超低导通电阻沟槽栅LDMOS器件研究 [J ] . 电子学报 , 2023 , 51 ( 8 ): 1995 - 2002 .

LIN X N , WU T Z , XU C Q , et al . Research on ultra-low on-resistance trench gate LDMOS device [J ] . Acta Electronica Sinica , 2023 , 51 ( 8 ): 1995 - 2002 . (in Chinese)

SAITO W , OMURA I , AIDA S , et al . Semisuperjunction MOSFETs: New design concept for lower on resistance and softer reverse-recovery body diode [J ] . IEEE Transactions on Electron Devices , 2003 , 50 ( 8 ): 1801 - 1806 .

KONDEKAR P N , PARIKH C D , PATIL M B . Analysis of breakdown voltage and on resistance of super junction power MOSFET CoolMOS/sup TM/using theory of novel voltage sustaining layer [C ] // 2002 IEEE 33rd Annual IEEE Power Electronics Specialists Conference . Piscataway : IEEE , 2002 : 1769 - 1775 .

DEBOY G , MARZ N , STENGL J P , et al . A new generation of high voltage MOSFETs breaks the limit line of silicon [C ] // International Electron Devices Meeting 1998 . Technical Digest . Piscataway : IEEE , 1998 : 683 - 685 .

BUZZO M , RUB M , CIAPPA M , et al . Characterization of 2D dopant profiles for the design of proton implanted high-voltage super junction [C ] // 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits . Piscataway : IEEE , 2005 : 285 - 289 .

KANG H , DONATO N , UDREA F . Effect of pillar ripple on static and dynamic trade-offs in superjunction MOSFETs [J ] . IEEE Electron Device Letters , 2020 , 41 ( 5 ): 753 - 756 .

AKSHAY K , KARMALKAR S . Quick design of a superjunction considering charge imbalance due to process variations [J ] . IEEE Transactions on Electron Devices , 2020 , 67 ( 8 ): 3024 - 3029 .

VILLAMOR A , CORTÉS I , FLORES D , et al . Capacitive behaviour in super junction trench MOSFET devices [C ] // Proceedings of the 8th Spanish Conference on Electron Devices . Piscataway : IEEE , 2011 : 1 - 4 .

WANG R D , WANG Y B , QIAO M , et al . Interaction mechanism between C GD and C DS based on space competition and optimization method of dynamic characteristic for 600V super-junction VDMOS [C ] // 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD) . Piscataway : IEEE , 2022 : 133 - 136 .

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

A Dual-Trench-Gate Silicon on Insulator Device with a L-shaped Gate Field Plate

Research on Ultra-Low On-Resistance Trench Gate LDMOS Device

Study on Breakdown Characteristic of Low Pressure Dielectric Barrier Discharge

A Fast Method for 3-D VLSI Interconnect Capacitance Extraction: Quasi-Multiple Medium Method

Related Author

CHONG Yi-ning

LI Jue

QIAO Ming

DAI Hong-li

ZHAO Hong-dong

WANG Luo-xin

SHI Yan-mei

LI Ming-ji

Related Institution

National Key Laboratory of Electronic Thin Film and Integrated Devices， University of Electronic Science and Technology of China

Guangdong Institute of Electronic Information Engineering， University of Electronic Science and Technology of China

Shenzhen Institute for Advanced Study， University of Electronic Science and Technology of China

School of Electronics Information Engineering, Hebei University of Technology

School of Electrical and Electronic Engineering, Tianjin University of Technology

⁰