High Efficiency Harmonic Tuned Power Oscillator with a CRLH Cell in Feedback Path

CAI Qi

doi:10.12263/DZXB.20231202

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High Efficiency Harmonic Tuned Power Oscillator with a CRLH Cell in Feedback Path

PAPERS | 更新时间：2025-12-11

- High Efficiency Harmonic Tuned Power Oscillator with a CRLH Cell in Feedback Path
- ACTA ELECTRONICA SINICA Vol. 52, Issue 11, Pages: 3877-3885(2024)
- 作者机构：
  
  1.南京邮电大学通信与信息工程学院，江苏南京 210023
  2.东南大学毫米波国家重点实验室，江苏南京 211189
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China(62001242);Open Research Fund of State Key Laboratory of Millimeter Waves(K202321)
- DOI：10.12263/DZXB.20231202
  CLC： TN722;TN492
- Received：25 December 2023，
  
  Revised：2024-07-05，
  
  Published：25 November 2024
- 稿件说明：
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蔡奇. 基于CRLH反馈回路的高效率谐波调谐功率振荡器设计[J]. 电子学报, 2024, 52(11): 3877-3885.

CAI Qi. High Efficiency Harmonic Tuned Power Oscillator with a CRLH Cell in Feedback Path[J]. Acta Electronica Sinica, 2024, 52(11): 3877-3885.
蔡奇. 基于CRLH反馈回路的高效率谐波调谐功率振荡器设计[J]. 电子学报, 2024, 52(11): 3877-3885. DOI：10.12263/DZXB.20231202

CAI Qi. High Efficiency Harmonic Tuned Power Oscillator with a CRLH Cell in Feedback Path[J]. Acta Electronica Sinica, 2024, 52(11): 3877-3885. DOI：10.12263/DZXB.20231202

摘要

设计了一种高效率谐波调谐功率振荡器，并在反馈回路中引入互补左右手（Composite Right/Left Handed，CRLH）单元.通过谐波负载牵引仿真得到晶体管的最佳基波和谐波阻抗.通过反馈回路中的CRLH单元，实现反馈信号幅度和相位的控制，以及频率的选择.此外，负载网络通过控制二次和三次谐波终端提高效率.为了验证上述方法，采用GaN高电子迁移率晶体管（High Electron Mobility Transistor，HEMT）在3.5 GHz设计了一个功率振荡器.测试结果表明，功率振荡器在3.49 GHz的最大效率为65.5%，对应的输出功率为39.7 dBm，验证了本文提出的电路拓扑和设计方法的有效性.同时，和其他高效率振荡器相比，本文设计的振荡器具有最小的电路尺寸.

Abstract

One high efficiency harmonic tuned RF (Radio-Frequency) oscillator with a composite right/left-handed (CRLH) cell in feedback path is presented. The optimum load impedances at fundamental and harmonic frequencies are obtained through harmonic load-pull simulation. A CRLH cell in the feedback path is employed to provide appropriate amplitude and phase signal

and to control the oscillation frequency. Besides

the load network is synthesized to control the second and third harmonic terminations to improve the efficiency. For demonstration

a RF oscillator using GaN high electron mobility transistor (HEMT) is designed and fabricated at 3.5 GHz. The measured results show that the power oscillator achieves a maximum efficiency of 65.5% with an output power of 39.7 dBm at 3.49 GHz

which proves the proposed circuit topology and the design method. Meanwhile

the proposed oscillator has the smallest circuit size compared with other reported high-efficiency oscillators.

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references

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