Research Progress of Two-Dimensional Electrical Conductivity and Field Effect Transistors of Diamond

ZHANG Jin-feng; ZHANG Jin-cheng; REN Ze-yang; SU Kai; HAO Yue

doi:10.12263/DZXB.20240103

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Research Progress of Two-Dimensional Electrical Conductivity and Field Effect Transistors of Diamond

SURVEY AND REVIEW | 更新时间：2025-12-24

- Research Progress of Two-Dimensional Electrical Conductivity and Field Effect Transistors of Diamond
- ACTA ELECTRONICA SINICA Vol. 52, Issue 6, Pages: 2151-2160(2024)
- 作者机构：
  
  1.西安电子科技大学,宽禁带半导体器件与集成技术全国重点实验室,微电子学院,陕西西安 710071
  2.西安电子科技大学芜湖研究院,安徽芜湖 241002
- 作者简介：
- 基金信息：
  
  National Key Research and Development Program of China(2022YFB3608600);National Natural Science Foundation of China(62127812;62374122)
- DOI：10.12263/DZXB.20240103
  CLC： TP211+.5;
- Received：26 January 2024，
  
  Revised：2024-04-21，
  
  Published：25 June 2024
- 稿件说明：
移动端阅览
张金风, 张进成, 任泽阳, 等. 金刚石二维电导和场效应管研究新进展[J]. 电子学报, 2024, 52(06): 2151-2160.

ZHANG Jin-feng, ZHANG Jin-cheng, REN Ze-yang, et al. Research Progress of Two-Dimensional Electrical Conductivity and Field Effect Transistors of Diamond[J]. Acta Electronica Sinica, 2024, 52(06): 2151-2160.
张金风, 张进成, 任泽阳, 等. 金刚石二维电导和场效应管研究新进展[J]. 电子学报, 2024, 52(06): 2151-2160. DOI：10.12263/DZXB.20240103

ZHANG Jin-feng, ZHANG Jin-cheng, REN Ze-yang, et al. Research Progress of Two-Dimensional Electrical Conductivity and Field Effect Transistors of Diamond[J]. Acta Electronica Sinica, 2024, 52(06): 2151-2160. DOI：10.12263/DZXB.20240103

摘要

金刚石表面沟道场效应管以氢终端金刚石表面的二维空穴气2DHG（Two-Dimensional Hole Gas）作为沟道实现输入电压对输出电流的控制，是目前金刚石电子器件的主流结构.该2DHG面电导具有可大范围调控的面电荷密度和较高空穴饱和漂移速度.本文回顾了金刚石场效应管器件在直流、频率和功率特性的研究进展，揭示了低迁移率是制约金刚石低功耗高速数字电路、高频器件和高功率微波器件发展的主要因素.从理论和实验总结了金刚石表面电导出现的类调制掺杂的新掺杂机理，尤其实现了室温下2DHG霍尔迁移率提升到680 cm

/Vs，材料方阻从10 kΩ/sq数量级降低到1.4 kΩ/sq电导性能的突破.相信这将会引起金刚石场效应管性能极大提升和器件的快速发展.

Abstract

Diamond surface-channel field-effect transistor utilizes two-dimensional hole gas (2DHG) on the hydrogen-terminated diamond surface as the channel to realize the control on outp

ut current by input voltage

and it is the mainstream structure of diamond electronic devices. The 2DHG conductivity has a large range of controllable sheet density and a high saturation drift velocity. This paper reviewed the research progress of diamond field-effect transistors in DC

frequency

and power characteristics

and revealed that low mobility is the main limiting factor for the development of diamond-based low-power high-speed digital circuits

high-frequency devices

and high-power microwave devices. It summarized the theoretical and experimental research of a new doping mechanism similar to modulation doping that emerged for the diamond surface conductivity recently. At room temperature the 2DHG Hall mobility has increased to 680 cm

/Vs

and the relevant square resistance has decreased from about 10 kΩ/sq to 1.4 kΩ/sq

which is expected to cause a great improvement in the performance of diamond field-effect transistors.

关键词

Keywords

references

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