Key Issue and Research Challenges of Wide Bandgap Semiconductor Detectors for Fusion Neutron Detection

SU Kai; ZHANG Jin-feng; ZHANG Yi-yun; JIANG Shu-qing; GUO Hui; ZHANG Jin-cheng; HAO Yue

doi:10.12263/DZXB.20240293

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Key Issue and Research Challenges of Wide Bandgap Semiconductor Detectors for Fusion Neutron Detection

PERSPECTIVE | 更新时间：2025-12-08

- Key Issue and Research Challenges of Wide Bandgap Semiconductor Detectors for Fusion Neutron Detection
- ACTA ELECTRONICA SINICA Vol. 52, Issue 8, Pages: 2933-2938(2024)
- 作者机构：
  
  1.西安电子科技大学集成电路学部宽禁带半导体器件与集成技术全国重点实验室,陕西西安 710071
  2.西安电子科技大学宽禁带半导体国家工程研究中心,陕西西安 710071
  3.中国科学院半导体研究所,北京 100083
  4.中国工程物理研究院核物理与化学研究所,四川绵阳 621900
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China(62134006;62204193;62127812;62374122);National Key Research and Development Program of China(2022YFB3608600);China Postdoctoral Science Foundation(2021TQ0256)
- DOI：10.12263/DZXB.20240293
  CLC： TN3;TM23;TL814
- Received：02 April 2024，
  
  Revised：2024-08-05，
  
  Published：25 August 2024
- 稿件说明：
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苏凯, 张金风, 张逸韵, 等. 面向聚变中子探测的宽禁带半导体探测器关键问题与研究挑战[J]. 电子学报, 2024, 52(08): 2933-2938.

SU Kai, ZHANG Jin-feng, ZHANG Yi-yun, et al. Key Issue and Research Challenges of Wide Bandgap Semiconductor Detectors for Fusion Neutron Detection[J]. Acta Electronica Sinica, 2024, 52(08): 2933-2938.
苏凯, 张金风, 张逸韵, 等. 面向聚变中子探测的宽禁带半导体探测器关键问题与研究挑战[J]. 电子学报, 2024, 52(08): 2933-2938. DOI：10.12263/DZXB.20240293

SU Kai, ZHANG Jin-feng, ZHANG Yi-yun, et al. Key Issue and Research Challenges of Wide Bandgap Semiconductor Detectors for Fusion Neutron Detection[J]. Acta Electronica Sinica, 2024, 52(08): 2933-2938. DOI：10.12263/DZXB.20240293

摘要

近年来国际聚变反应研究获得重大进展，选择抗位移能力强的宽禁带半导体探测器是推动聚变研究的关键技术之一.金刚石超宽禁带半导体具备卓越抗辐照和时间响应等特性，是聚变诊断特别是高能中子诊断的理想材料，碳化硅宽禁带半导体也可测量中子，且大尺寸外延技术更成熟，可覆盖聚变研究装置上的大规模应用.通过这两种宽禁带半导体辐射探测器的研究并实现自主可控的高性能器件制备，将显著提高我国核聚变反应测量系统的性能，支持我国在未来的全球能源革命中处于领先优势.本文将对这两种宽禁带半导体探测器在聚变中子探测应用场景下研制的关键问题和研究挑战进行探讨，助力我国聚变能源开发和应用.

Abstract

In recent years

significant progress has been made in international fusion reaction research. The neutron detection technology which can meet requirements of nuclear energy systems such as controlled fusion reactors featuring high-energy and high-dose radiation has always been one of the core technologies in fusion research and application. Choosing wide bandgap semiconductor materials with strong radiation hardness to develop radiation detectors is an inevitable requirement for the development of radiation detectors in fusion installation. Diamond has excellent radiation hardness and ultra-fast time response

and is considered an ideal semiconductor material for fusion detection

especially for high-energy neutron diagnosis. Silicon carbide is also qualified to directly measure fusion neutrons

and its large-size epitaxial growth technology is quite mature. Large-area and highly sensitive neutron detectors prepared using silicon carbide can cover large-scale applications in fusion research installation. By studying these two types of wide bandgap semiconductor radiation detectors and achieving completely self-dependent preparation of high-performance devices

we can significantly improve the performance of China’s nuclear fusion reaction measurement systems

and support China standing at the leading edge in the future global energy revolution. Therefore

this article will elaborate on the key issues and research challenges in the development of these two wide bandgap semiconductor detectors in the application scenarios of fusion neutron detection

to assist in the development and application of fusion energy in China.

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references

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