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1.河南工业大学粮食信息处理与控制教育部重点实验室,河南郑州 450001
2.河南省粮食光电检测与控制重点实验室, 河南郑州450001
3.河南工业大学信息科学与工程学院,河南郑州 450001
4.河南工业大学人工智能与大数据学院,河南郑州 450001
Received:20 September 2024,
Revised:2024-11-08,
Published:25 February 2025
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葛宏义, 贾柯柯, 蒋玉英, 等. 基于VO2与光敏硅的双功能可切换THz超材料吸收器[J]. 电子学报, 2025, 53(02): 395-408.
GE Hong-yi, JIA Ke-ke, JIANG Yu-ying, et al. Dual-Function Switchable THz Metamaterial Absorber Based on VO2 and Photosensitive Silicon[J]. Acta Electronica Sinica, 2025, 53(02): 395-408.
葛宏义, 贾柯柯, 蒋玉英, 等. 基于VO2与光敏硅的双功能可切换THz超材料吸收器[J]. 电子学报, 2025, 53(02): 395-408. DOI:10.12263/DZXB.20240847
GE Hong-yi, JIA Ke-ke, JIANG Yu-ying, et al. Dual-Function Switchable THz Metamaterial Absorber Based on VO2 and Photosensitive Silicon[J]. Acta Electronica Sinica, 2025, 53(02): 395-408. DOI:10.12263/DZXB.20240847
传统可调谐太赫兹宽带吸收器大多具有结构复杂和功能单一等特点,使其实际应用场景受到局限.针对这一问题,本文基于二氧化钒(VO
2
)的热相变特性与光敏硅(Si)的泵浦光敏感特性提出了一种双功能THz超材料吸收器.通过调节VO
2
与Si的电导率不仅可实现宽带吸收与电磁诱导透明(Electromagnetically Induced Transparency,EIT)之间的动态切换,还可以动态调节吸收率与EIT谐振峰的振幅值.当
σ
(VO
2
)=2×10
5
S/m且
σ
(Si)=10 S/m时,吸收器在1.24~3.65 THz范围内表现为平均吸收率在94%以上的宽频带吸收.当
σ
(VO
2
)=20 S/m且
σ
(Si)=1×10
6
S/m时,吸收器的透射传输曲线表现为EIT效应,在1.50~2.50 THz范围内形成了幅度大于90%的谐振透明窗口.此外,利用阻抗匹配和等效电路理论进一步分析了吸收器的物理机制.随后分析了EIT谐振峰的折射率传感特性,
f
1
和
f
2
的传感灵敏度分别为224 GHz/RIU和310 GHz/RIU,
Q
值分别为3.82和18.5,具有良好的传感性能.最后分析了EIT窗口的慢光效应,结果表明该器件具有良好的慢光效果.本文提出的吸收器结构简单、工作频带宽、可调谐范围大并且双功能可切换,未来在光学器件、电磁隐身和传感检测等领域具有潜在的应用前景.
Most of the traditional tunable terahertz broadband absorbers are characterized by complex structure and single function
which make their practical application scenarios limited. To address this problem
this paper proposes a bifunctional THz metamaterial absorber based on the thermal phase transition property of vanadium dioxide (VO
2
) and the pump light sensitivity property of photosensitive silicon (Si). By adjusting the conductivity of VO
2
and Si
not only the dynamic switching between broadband absorption and electromagnetically induced transparency (EIT) can be realized
but also the amplitude values of the absorption rate and the resonance peak of EIT can be dynamically adjusted. When
σ
(VO
2
) = 2×10
5
S/m and
σ
(Si) = 10 S/m
the absorber exhibits broadband absorption in the range of 1.24~3.65 THz with an
average absorbance more than 94%. When
σ
(VO
2
) = 20 S/m and
σ
(Si) = 1×10
6
S/m
the transmittance transmission curve of the absorber exhibits the EIT effect
which creates a resonant transparent window with an amplitude greater than 90% in the range of 1.50~2.50 THz. In addition
the physical mechanism of the absorber was further analyzed using impedance matching and equivalent circuit theory. Subsequently
the refractive index sensing characteristics of the EIT resonant peaks were analyzed
and the sensing sensitivities of
f
1
and
f
2
were 224 GHz/RIU and 310 GHz/RIU with
Q
values of 3.82 and 18.5
respectively
which provided good sensing performance. Finally
the slow light effect of the EIT window is analyzed
and the results show that the device has good slow light effect. With simple structure
wide operating bandwidth
large tunable range and dual-function switchable
the absorber proposed in this paper has potential future applications in the fields of optical devices
electromagnetic stealth and sensing detection.
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