Weak Selective Growth of Ga<sub>2</sub>O<sub>3</sub> Nanowires in Hydrothermal Synthesis

LI Ke-xin; JIN Xiao-pin; GAO Zhi-yuan; ZHU Hai-chang; XU Bo-yan; YANG Qi

doi:10.12263/DZXB.20241047

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Weak Selective Growth of Ga₂O₃ Nanowires in Hydrothermal Synthesis

PAPERS | 更新时间：2025-10-16

- Weak Selective Growth of Ga₂O₃ Nanowires in Hydrothermal Synthesis
- ACTA ELECTRONICA SINICA Vol. 53, Issue 6, Pages: 1906-1916(2025)
- 作者机构：
  
  北京工业大学电子科学与技术系，北京 100124
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China(11204009);Beijing Municipal Natural Science Foundation(4142005;4182014)
- DOI：10.12263/DZXB.20241047
  CLC： TN3;
- Received：21 November 2024，
  
  Revised：2025-04-06，
  
  Published：25 June 2025
- 稿件说明：
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李可心, 靳晓频, 高志远, 等. Ga₂O₃纳米线在水热法合成中选择性生长弱化的原因[J]. 电子学报, 2025, 53(06): 1906-1916.

LI Ke-xin, JIN Xiao-pin, GAO Zhi-yuan, et al. Weak Selective Growth of Ga₂O₃ Nanowires in Hydrothermal Synthesis[J]. Acta Electronica Sinica, 2025, 53(06): 1906-1916.
李可心, 靳晓频, 高志远, 等. Ga₂O₃纳米线在水热法合成中选择性生长弱化的原因[J]. 电子学报, 2025, 53(06): 1906-1916. DOI：10.12263/DZXB.20241047

LI Ke-xin, JIN Xiao-pin, GAO Zhi-yuan, et al. Weak Selective Growth of Ga₂O₃ Nanowires in Hydrothermal Synthesis[J]. Acta Electronica Sinica, 2025, 53(06): 1906-1916. DOI：10.12263/DZXB.20241047

摘要

超宽禁带半导体Ga₂O₃米线作为一种具备独特性能的纳米材料，近年来在科学界引起了广泛的关注.作为第三代金属氧化物半导体的ZnO，ZnO纳米线的生长对衬底具有选择性，可以在与其同质的衬底上实现高均匀性的阵列，但在异质衬底上不易长出，从而实现自组织的微纳结构的图案化；然而对于新型金属氧化物半导体Ga₂O₃来说，Ga₂O₃纳米线的生长对衬底的选择性并不强，在同质衬底上实现的阵列既不均匀也不密集，并且在各种衬底上也均可长出.本文通过水热法生长纳米线的多组对比性实验，全面且系统地探讨了影响Ga₂O₃纳米线形貌的因素，利用控制变量法研究各因素之间的关系，发现了Ga₂O₃纳米线选择性生长出现弱化是因为晶格失配度不再是决定纳米线生长的唯一重要因素，并提出异质成核，把种子层的晶粒尺寸和粗糙度作为核心因素，发现它们是影响纳米线生长形态与密度的另一决定性因素，二者同时在Ga₂O₃纳米线生长过程中发挥关键作用.这一结论对于深入理解Ga₂O₃纳米线的生长机制并制备自组织器件结构具有重要的指导意义.

Abstract

Ultra-broadband semiconductor gallium oxide (Ga₂O₃) nanowires have attracted much attention in the scientific community in recent years as a nanomaterial with unique properties. As a third-generation metal-oxide semiconductor

ZnO

the growth of ZnO nanowires is substrate-selective

and highly uniform arrays can be achieved on substrates homogeneous to it

but they are not easy to grow on heterogeneous substrates

thus enabling the patterning of self-organized micro- and nanostructures; however

for a new metal-oxide semiconductor

Ga₂O₃

the growth of Ga₂O₃ nanowires is not substrate-selective. The arrays realized on homogeneous substrates are neither homogeneous nor dense and can be grown on a variety of substrates. In this paper

we comprehensively and systematically explore the factors affecting the morphology of Ga₂O₃ nanowires through several sets of comparative experiments on the growth of nanowires by hydrothermal method

investigat the relationship between the factors by using the control variable method

found that the selective growth of Ga₂O₃ nanowires is weakened because lattice matching is no longer the only important factor determining the growth of the nanowires

and propose the heterogeneous nucleation

which take the grain size and roughness of the seed layer as the core factors

and find that they are not as important as those in the growth of the nanowires

roughness as core factors

and find that they are another decisive factor affecting the morphology and density of nanowire growth

and both of them play a key role in the Ga₂O₃ nanowire growth process at the same time. This conclusion is of great significance in guidingthe in-depth understanding of the growth mechanism of Ga₂O₃ nanowires and the preparation of self-organized device structures.

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Weak Selective Growth of Ga2O3 Nanowires in Hydrothermal Synthesis

DOI：10.12263/DZXB.20241047

摘要

Abstract

关键词

Keywords

references

Weak Selective Growth of Ga₂O₃ Nanowires in Hydrothermal Synthesis