Low-Voltage, Low-Noise, High-Precision Bandgap Reference for High-Resolution ADC

LIU Lian-xi; WU Shao-fei; WANG Ge-fu; DAI Yu-xuan; WANG Yu-yuan; ZHU Zhang-ming; LIAO Xu-feng

doi:10.12263/DZXB.20250159

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Low-Voltage, Low-Noise, High-Precision Bandgap Reference for High-Resolution ADC

PAPERS | 更新时间：2025-10-16

- Low-Voltage, Low-Noise, High-Precision Bandgap Reference for High-Resolution ADC
- ACTA ELECTRONICA SINICA Vol. 53, Issue 6, Pages: 1865-1873(2025)
- 作者机构：
  
  西安电子科技大学集成电路学部，陕西西安 710071
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China(62131010;62204183;62222406);Fundamental Research Funds for the Central Universities(YJSJ25013)
- DOI：10.12263/DZXB.20250159
  CLC： TN43;
- Received：04 March 2025，
  
  Revised：2025-05-14，
  
  Published：25 June 2025
- 稿件说明：
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刘帘曦, 仵少飞, 王格夫, 等. 应用于高精度ADC的低失调低噪声高精度基准电压源[J]. 电子学报, 2025, 53(06): 1865-1873.

LIU Lian-xi, WU Shao-fei, WANG Ge-fu, et al. Low-Voltage, Low-Noise, High-Precision Bandgap Reference for High-Resolution ADC[J]. Acta Electronica Sinica, 2025, 53(06): 1865-1873.
刘帘曦, 仵少飞, 王格夫, 等. 应用于高精度ADC的低失调低噪声高精度基准电压源[J]. 电子学报, 2025, 53(06): 1865-1873. DOI：10.12263/DZXB.20250159

LIU Lian-xi, WU Shao-fei, WANG Ge-fu, et al. Low-Voltage, Low-Noise, High-Precision Bandgap Reference for High-Resolution ADC[J]. Acta Electronica Sinica, 2025, 53(06): 1865-1873. DOI：10.12263/DZXB.20250159

摘要

本文设计了一种应用于高精度模数转换器（Analog-to-Digital Converter，ADC）的低失调、低噪声、高精度带隙基准（BandGap Reference，BGR）芯片.针对传统架构的局限性，本工作提出了两项新技术：首先，采用反馈提升技术将运算放大器的失调电压和低频噪声等效到基准输出时减小至1/23；其次，提出了一种高精度基极电流补偿技术，降低不同工艺角和器件失配造成的基准输出偏移.设计的BGR芯片采用0.18 μm CMOS工艺实现，芯片面积0.142 × 0.258 mm

.测试结果表明，该BGR在1.2 V电源电压下输出0.6 V的参考电压，静态电流31 μA，0.1~10.0 Hz的积分噪声为2.79 μVrms，在-40~125 ℃ 温度范围内，基准源输出电压的温度系数是3.6 ppm/℃.

Abstract

A low-offset

low-noise

high-precision bandgap reference (BGR) chip for high-resolution analog-to-digital converters (ADC) is designed in this paper. In response to the limitations of traditional architectures

two new technologies are proposed. Firstly

feedback enhancement technology reduces the operational amplifier’s offset voltage and low-frequency noise to 1/23 when equival

ent to the reference output. Secondly

a high-precision base current compensation technique is proposed to reduce the reference output deviation under various corners and device mismatch. Implemented in 0.18 μm CMOS process

the proposed BGR occupies a chip area of 0.142 × 0.258 mm

.Measurement results demonstrate that the BGR generates a 0.6 V reference voltage under a 1.2 V power supply

consuming 31 μA quiescent current. The circuit achieves an integrated noise of 2.79 μVrms over 0.1~10.0 Hz and exhibits a temperature coefficient of 3.6 ppm/°C in the range of -40~125 ℃.

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references

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