Research on Analytical Modeling of Two-Dimensional Atomic-Threshold-Switching FETs

JIANG Chun-sheng; HUO Yi-kang; HUA Qi-lin; SONG Shu-xiang; PAN Li-yang; XU Jun

doi:10.12263/DZXB.20250400

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Research on Analytical Modeling of Two-Dimensional Atomic-Threshold-Switching FETs

PAPERS | 更新时间：2025-12-27

- Research on Analytical Modeling of Two-Dimensional Atomic-Threshold-Switching FETs
- ACTA ELECTRONICA SINICA Vol. 53, Issue 9, Pages: 3163-3172(2025)
- 作者机构：
  
  1.广西师范大学电子与信息工程学院，广西桂林541004
  2.北京理工大学集成电路与电子学院，北京100081
  3.清华大学集成电路学院，北京100084
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China(U24A20296;62464001);Beijing Superstring Academy of Memory Technology(SAMT-QH-KT-22030101);Guangxi Key Laboratory of Brain-inspired Computing and Intelligent Chips(BCIC-23-K5);Innovation Project of Guangxi Graduate Education(YCSW2025152)
- DOI：10.12263/DZXB.20250400
  CLC： TN386.1;
- Received：20 May 2025，
  
  Accepted：04 September 2025，
  
  Published：25 September 2025
- 稿件说明：
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蒋春生, 霍亦康, 化麒麟, 等. 基于原子阈值开关的二维沟道材料场效应晶体管解析模型研究[J]. 电子学报, 2025, 53(09): 3163-3172.

JIANG Chun-sheng, HUO Yi-kang, HUA Qi-lin, et al. Research on Analytical Modeling of Two-Dimensional Atomic-Threshold-Switching FETs[J]. Acta Electronica Sinica, 2025, 53(09): 3163-3172.
蒋春生, 霍亦康, 化麒麟, 等. 基于原子阈值开关的二维沟道材料场效应晶体管解析模型研究[J]. 电子学报, 2025, 53(09): 3163-3172. DOI：10.12263/DZXB.20250400

JIANG Chun-sheng, HUO Yi-kang, HUA Qi-lin, et al. Research on Analytical Modeling of Two-Dimensional Atomic-Threshold-Switching FETs[J]. Acta Electronica Sinica, 2025, 53(09): 3163-3172. DOI：10.12263/DZXB.20250400

摘要

基于原子阈值开关的二维沟道材料场效应晶体管（Two-Dimensional Atomic Threshold Switching Field-Effect-Transistor，2D ATS-FET）凭借其超低关态电流、极小亚阈值摆幅、极低工作电压、紧凑的器件结构以及与主流CMOS（Complementary Metal-Oxide-Semiconductor）工艺相兼容等优势，在后摩尔时代低功耗逻辑计算、选通器和神经形态计算等领域具有重要的应用前景.2D ATS-FET可以视为由一个原子阈值开关（Threshold Switching，TS）器件和一个基准2D FET器件串联而成.本研究首先基于导电细丝（Conductive Filament，CF）演化动力学和隧穿机制建立了TS器件的电流-电压（current-Voltage，I-V）特性模型.其次，基于漂移-扩散输运机制，构建了基准2D FET器件的I-V特性模型.最后，基于两串联器件的导通电流必然相等的原理，使用Verilog-A编程语言，获得了与主流商业电路仿真器相兼容的标准SPICE（Simulation Program with Integrated Circuit Emphasis）模型.解析模型的计算结果与实验测试数据具有良好的一致性，验证了本文所提出理论模型的正确性.此外，基于这一解析模型，本文系统地研究了2D ATS-FET的电学特性及其工作机理.该解析模型为2D ATS-FET器件的工作机理研究、性能优化设计和电路仿真设计提供了可靠的理论基础和有效的研究工具.

Abstract

Two-dimensional atomic-threshold-switching field-effect-transistors (2D ATS-FETs) offer great promise for low-power applications in logic computing

selectors

and neuromorphic systems in the post-Moore era

thanks to their ultra-low off-state current

extremely small subthreshold swing

ultra-low operating voltage

compact device structure

and compatibility with mainstream complementary metal-oxide-semiconductor (CMOS) process. A 2D ATS-FET can be regarded as a series connection of an atomic threshold switching (TS) device and a baseline 2D FET. In this study

we first developed a current-voltage (I-V) model for the TS device based on conductive filament (CF) evolution dynamics and tunneling mechanisms. Then

we propose a current-voltage model for the baseline 2D FET based on drift-diffusion transport mechanisms. Finally

by leveraging the fact that the conduction current of the two series-connected devices must be equal

we implemente a standard simulation program with integrated circuit emphasis (SPICE) model compatible with mainstream commercial circuit simulators using the Verilog-A language. The calculated results from the analytical model show good agreement with experimental data

validating the correctness of the proposed theoretical model. Furthermore

we systematically investigated the electrical characteristics and working mechanisms of 2D ATS-FETs based on this analytical model. This analytical model provides a reliable theoretical foundation and an effective research tool for the study of device mechanisms

performance optimization

and circuit design of 2D ATS-FETs.

关键词

Keywords

references

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