Hermetically Packaged Low-Noise Amplifier Module Based on InP HEMT Technology

DENG Shi-he; ZHANG Meng; SHEN Ya-fei; XIE Zhen-chao; WANG Wen-wei

doi:10.12263/DZXB.20250526

您当前的位置：

首页 >

文章列表页 >

Hermetically Packaged Low-Noise Amplifier Module Based on InP HEMT Technology

PAPERS | 更新时间：2026-02-05

- Hermetically Packaged Low-Noise Amplifier Module Based on InP HEMT Technology
- ACTA ELECTRONICA SINICA Vol. 53, Issue 10, Pages: 3497-3503(2025)
- 作者机构：
  
  上海航天电子技术研究所，上海 201100
- 作者简介：
- 基金信息：
  
  National Key Research and Development Program(2023YFB3905604)
- DOI：10.12263/DZXB.20250526
  CLC： TN454;
- Received：20 June 2025，
  
  Accepted：11 October 2025，
  
  Published：25 October 2025
- 稿件说明：
移动端阅览
邓世河, 张盟, 沈亚飞, 等. 基于InP HEMT工艺的低噪声放大器模块气密性封装[J]. 电子学报, 2025, 53(10): 3497-3503.

DENG Shi-he, ZHANG Meng, SHEN Ya-fei, et al. Hermetically Packaged Low-Noise Amplifier Module Based on InP HEMT Technology[J]. Acta Electronica Sinica, 2025, 53(10): 3497-3503.
邓世河, 张盟, 沈亚飞, 等. 基于InP HEMT工艺的低噪声放大器模块气密性封装[J]. 电子学报, 2025, 53(10): 3497-3503. DOI：10.12263/DZXB.20250526

DENG Shi-he, ZHANG Meng, SHEN Ya-fei, et al. Hermetically Packaged Low-Noise Amplifier Module Based on InP HEMT Technology[J]. Acta Electronica Sinica, 2025, 53(10): 3497-3503. DOI：10.12263/DZXB.20250526

摘要

本文设计并实现了一款基于磷化铟高电子迁移率晶体管（High Electron Mobility Transistor，HEMT）芯片的低插损、气密性低噪声放大器（Low Noise Amplifier，LNA）模块.针对传统波导E面探针（E代表波导的电场平面）封装结构在环境实验中容易受到水汽影响的缺陷，提出具有气密性能的垂直波导-微带过渡设计，提升了放大器模块在恶劣环境中的可靠性.同时，通过在波导短路区域周围引入周期性间隙波导结构，有效抑制了石英基板中电磁波能量泄漏与高次模谐振.仿真结果表明，该波导-微带过渡结构在87.5~90.5 GHz内反射损耗小于-25 dB，插入损耗小于0.3 dB.通过补偿键合金丝自身引入的寄生电感，带内反射性能由-15 dB改善至-25 dB，降低能量在传输过程的反射.模块实测结果显示，放大器模块在工作频段内增益大于20 dB，输入端反射损耗小于-20 dB，典型噪声系数值为2.5 dB，双边封装导致的损耗小于1 dB.整体性能与芯片手册数据吻合度较高，验证了该设计的有效性.

Abstract

This paper presents the design and implementation of a low-insertion-loss

hermetic low-noise amplifier (LNA) module based on an indium phosphide high-electron-mobility transistor (InP HEMT) chip. To address the vulnerability of traditional E-plane probe waveguide packaging structures to moisture during environmental testing

a hermetic vertical waveguide-to-microstrip transition structure is proposed

enhancing the reliability of the amplifier module in harsh conditions. Furthermore

by introducing a periodic gap waveguide structure around the waveguide short-circuit region

energy leakage and higher-order mode resonance in the quartz substrate are effectively suppressed. Simulation results demonstrate that the proposed transition structure achieves a return loss better than -25 dB and an insertion loss below 0.3 dB across 87.5~90.5 GHz. Through compensation for the parasitic inductance introduced by bonding wires

the in-band return performance is improved from -15 dB to -25 dB

reducing energy reflection during transmission. Measured results indicate a gain greater than 20 dB

an input return loss below -20 dB

a typical noise figure of 2.5 dB

and a total loss induced by the bilateral packaging of less than 1 dB within the operating band. The overall performance shows good agreement with the chip datasheet

validating the effectiveness of the proposed design.

关键词

Keywords

references

YU B , WANG Z G , LI O P , et al . A 200 GHz four-element phased-array receiver system-in-package using HTCC technology for sub-terahertz communications [J ] . IEEE Transactions on Microwave Theory and Techniques , 2024 , 72 ( 7 ): 3920 - 3934 .

KAI T , HIROKAWA J , ANDO M . A stepped post-wall waveguide with aperture interface to standard waveguide [C ] // IEEE Antennas and Propagation Society Symposium, 2004 . Piscataway : IEEE , 2004 : 1527 - 1530 .

GŁOGOWSKI R , ZÜRCHER J F , PEIXEIRO C , et al . Double resonance transition from rectangular waveguide to Substrate Integrated Waveguide [C ] // 2013 7th European Conference on Antennas and Propagation . Piscataway : IEEE , 2013 : 3353 - 3354 .

ZARIFI D , ORAIZI H . A V-band microstrip line to groove gap waveguide transition [C ] // 2016 16th Mediterranean Microwave Symposium . Piscataway : IEEE , 2017 : 1 - 2 .

SVEDIN J , PELLIKKA T and HUSS L G . A direct transition from microstrip to waveguide for millimeter-wave MMICs using LTCC [C ] // Asia-Pacific Microwave Conference 2011 . Piscataway : IEEE , 2011 : 102 - 105 .

DEUTSCHMANN B , JACOB A F . A full W-band waveguide-to-differential microstrip transition [C ] // 2019 IEEE MTT-S International Microwave Symposium . Piscataway : IEEE , 2019 : 335 - 338 .

SHI Y R , ZHANG J Z , ZENG S , et al . Novel W -band millimeter-wave transition from microstrip line to groove gap waveguide for MMIC integration and antenna application [C ] // IEEE Transactions on Antennas and Propagation . Piscataway : IEEE , 2018 : 3172 - 3176 .

ROOSEFID R , ALÓS E A , SCHÄFER T , et al . Compact microstrip line to gap waveguide transition suitable for beam steering antenna applications at K-band [C ] // 2025 19th European Conference on Antennas and Propagation . Piscataway : IEEE , 2025 : 1 - 4 .

YE J X , WANG Y Q , MA K X . A low-loss hermetic packaging design for high-gain low-noise amplifier module with waveguide output [J ] . IEEE Microwave and Wireless Technology Letters , 2025 , 35 ( 10 ): 1610 - 1613 .

GONG J H , CHEN X , HU A Y , et al . A V-band 8-element phased array radiometer front-end for passive millimeter wave imaging [J ] . IEEE Sensors Journal , 2022 , 22 ( 21 ): 21057 - 21070 .

JAIN S K , KUMAR A , CHAKRAVARTY R , et al . Ka-band low noise amplifier sub-system module for communication satellite payload [C ] // 2014 IEEE International Microwave and RF Conference . Piscataway : IEEE , 2015 : 29 - 32 .

FU M Y , JIANG N H , BORNEMANN J , et al . Design and packaging analysis of a ku band high gain GaAs MMIC LNA [C ] // 2025 IEEE 20th International Symposium on Antenna Technology and Applied Electromagnetics . Piscataway : IEEE , 2025 : 140 - 143 .

郭庆 , 陈雨庭 , 段宗明 , 等 . 基于65 nm CMOS工艺的小型化高增益低噪声放大器设计 [J ] . 电子学报 , 2023 , 51 ( 3 ): 593 - 600 .

GUO Q , CHEN Y T , DUAN Z M , et al . Design of miniaturized high-gain low noise amplifier based on 65 nm CMOS process [J ] . Acta Electronica Sinica , 2023 , 51 ( 3 ): 593 - 600 . (in Chinese)

张博 , 张勇 , 江伟佳 , 等 . 太赫兹功率放大单片封装技术研究 [J ] . 电子学报 , 2023 , 51 ( 10 ): 2724 - 2732 .

ZHANG B , ZHANG Y , JIANG W J , et al . Research on terahertz monolithic integrated power amplifier package [J ] . Acta Electronica Sinica , 2023 , 51 ( 10 ): 2724 - 2732 . (in Chinese)

刘军 , 于伟华 , 吕昕 . 太赫兹波导封装技术的研究与应用 [J ] . 电子学报 , 2022 , 50 ( 8 ): 1859 - 1865 .

LIU J , YU W H , LÜ X . The study and application of terahertz waveguide package [J ] . Acta Electronica Sinica , 2022 , 50 ( 8 ): 1859 - 1865 . (in Chinese)

BRAZÁLEZ A A , RAJO-IGLESIAS E , KILDAL P S . Design of a transition from WR-15 to microstrip packaged by gap waveguide technology [C ] // 2014 International Symposium on Antennas and Propagation Conference Proceedings . Piscataway : IEEE , 2015 : 235 - 236 .

THOME F , LEUTHER A , GALLEGO J D , et al . 70~116 GHz LNAs in 35 nm and 50 nm gate-length metamorphic HEMT technologies for cryogenic and room-temperature operation [C ] // IEEE/MTT-S International Microwave Symposium . Piscataway : IEEE , 2018 : 1495 - 1498 .

KOBAYASHI K W , KUMAR V . A broadband 70~110 GHz E-/ W-band LNA using a 90-nm T-gate GaN HEMT technology [J ] . IEEE Microwave and Wireless Components Letters , 2021 , 31 ( 7 ): 885 - 888 .

CHEN Y , WANG W B , CHEN Z F , et al . An 88~100 GHz high-robustness low-noise amplifier with 3.0~3.5 dB noise figure using 0.1 μm GaN-on-SiC process [C ] // 2022 IEEE MTT-S International Wireless Symposium . Piscataway : IEEE , 2022 : 1 - 3 .

JOHN L , THOME F , WEBER R , et al . Low-noise amplifiers for the Arctic weather satellite [C ] // 2023 53rd European Microwave Conference . Piscataway : IEEE , 2023 : 18 - 21 .

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Research on Terahertz Monolithic Integrated Power Amplifier Package

Millimeter-Wave Broadband Directional Coupler Based on Gap Waveguide

Interferer Rejection Design of a 6.5~10 GHz UWB Low Noise Amplifier

A Low Cost W-Band Digital Communication system

THE (B(λkq) INTENSITY PARAMETERS AND 4f-4f TRANSITION PROBABILITIES OF Na₅Eu(MO₄)₄(M=Mo, W)

Related Author

YAN Bo

XU Rui-min

LIU Guang-ru

JIANG Wei-jia

ZHANG Yong

ZHANG Bo

WANG Hui

SHEN Rui-liang

Related Institution

School of Electronic Science and Engineering， University of Electronics Science and Technology of China

Ministry of Industry and Information Technology， Nanjing University of Aeronautics and Astronautics

Department of Communication Engineering， Nanjing University of Science and Technology

Guangdong Provincial Key Laboratory of Millimeter-Wave and Terahertz， South China University of Technology

Engineering Research Center of Flexible Radiation Protection Technology of Universities of Shaanxi Province

⁰