Research Progress on Avalanche Power Devices Based on GaN and Ga<sub>2</sub>O<sub>3</sub> Semiconductors

GONG Hehe; YANG Zineng; YE Jiandong; ZHANG Yuhao

doi:10.12263/DZXB.20251072

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Research Progress on Avalanche Power Devices Based on GaN and Ga₂O₃ Semiconductors

更新时间：2026-03-30

- Research Progress on Avalanche Power Devices Based on GaN and Ga₂O₃ Semiconductors
- ACTA ELECTRONICA SINICA Pages: 1-12(2026)
- 作者机构：
  
  1.香港大学电机与计算机工程系，香港 999077
  2.南京大学电子科学与工程学院，江苏南京 210023
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China(62425403;62234007);Jiangsu Provincial Science and Technology Major Project(BG2024030)
- DOI：10.12263/DZXB.20251072
  CLC： TN302;
- Received：19 November 2025，
  
  Accepted：29 December 2025，
  
  Online First：30 March 2026，
- 稿件说明：
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GONG Hehe, YANG Zineng, YE Jiandong, et al. Research Progress on Avalanche Power Devices Based on GaN and Ga₂O₃ Semiconductors[J/OL]. ACTA ELECTRONICA SINICA, 2026, 1-12.
DOI：

GONG Hehe, YANG Zineng, YE Jiandong, et al. Research Progress on Avalanche Power Devices Based on GaN and Ga₂O₃ Semiconductors[J/OL]. ACTA ELECTRONICA SINICA, 2026, 1-12. DOI： 10.12263/DZXB.20251072.

摘要

宽禁带（Wide bandgap，WBG）及超宽禁带（Ultra-wide bandgap，UWBG）半导体材料因其本征物理特性而成为新一代功率电子器件的核心支撑。相较于传统硅基器件，WBG/UWBG半导体具有更高的临界击穿电场、更宽的禁带宽度以及更优异的高温稳定性，使得功率器件在高电压、高频率和高功率密度条件下仍可保持低导通损耗与高可靠性运行。这些优势使其在新能源、电力输配、轨道交通以及脉冲功率等应用场景中展现出广阔前景。然而，在实际工程系统中，功率器件往往不可避免地面临感性负载突变、短路故障、电磁干扰脉冲以及高d

、d

应力等瞬态工况。在此类条件下，器件需要通过雪崩击穿过程吸收和耗散瞬态能量，以避免破坏性失效，因此雪崩能力已成为衡量高压功率器件安全工作区和系统鲁棒性的关键指标之一。本文以实现功率器件的“可重复、稳健雪崩”为核心目标，系统梳理了雪崩击穿的物理基础与工程内涵。首先，从载流子倍增以及电场分布等角度出发，综述了影响雪崩击穿行为的主要物理机制。其次，围绕雪崩特性的定量评估，系统总结了多维表征与测试方法，包括静态击穿以及动态UIS雪崩测试、雪崩能量表征等。在此基础上，进一步强调了终端与边缘结构设计在雪崩过程中的关键作用，阐明了终端技术在电场均匀化以及雪崩离化方面的协同机制。在器件层面，本文重点回顾了近年来氮化镓（GaN）垂直二极管与晶体管在雪崩耐量和可重复雪崩方面的研究进展，分析了其在高电场下实现均匀雪崩的结构设计及性能表征。同时，结合最新研究成果，总结了氧化镓（Ga

）异质结功率器件在高雪崩耐量的突破性进展，展示了UWBG材料在高功率与极端工况应用中的独特潜力。最后，面向工程化应用需求，本文讨论了材料-器件-电路协同的雪崩物理建模、高鲁棒终端结构与复合设计，复杂工况下的系统级雪崩可靠性研究，以及雪崩失效机理与热耦合演化规律研究，为下一代高压、高可靠性功率器件的设计、评估与应用提供参考与指导。

Abstract

Wide-bandgap (WBG) and ultra-wide-bandgap (UWBG) semiconductor materials have emerged as key enablers for next-generation power electronic devices owing to their intrinsic physical advantages. Compared with conventional silicon-based devices

WBG/UWBG semiconductors exhibit significantly higher critical breakdown electric fields

wider bandgaps

and superior high-temperature stability

allowing power devices to operate with low conduction loss and high reliability under high-voltage

high-frequency

and high-power-density conditions. These merits make them highly promising for applications in renewable energy systems

electric power transmission and distribution

railway transportation

and pulsed-power electronics. In practical engineering systems

however

power devices inevitably encounter transient operating conditions such as inductive load switching

short-circuit faults

electromagnetic interference pulses

and seve

re electrical stresses of d

and d

. Under such conditions

devices must absorb and dissipate transient energy through avalanche breakdown processes to avoid destructive failure. As a result

avalanche capability has become one of the critical figures of merit for evaluating the safe operating area and overall robustness of high-voltage power devices. With the objective of achieving “repeatable and robust avalanche” operation in power devices

this paper systematically reviews the physical foundations and engineering implications of avalanche breakdown. First

the dominant physical mechanisms governing avalanche behavior are summarized from the perspectives of carrier multiplication and electric-field distribution. Subsequently

focusing on the quantitative evaluation of avalanche characteristics

multidimensional characterization and testing methodologies are comprehensively reviewed

including static breakdown measurements

dynamic unclamped inductive switching (UIS) avalanche tests

and avalanche energy characterization. On this basis

the critical role of termination and edge-structure design in avalanche processes is further emphasized

and the synergistic mechanisms of termination technologies in electric-field optimization and avalanche ionization are elucidated. At the device level

recent advances in gallium nitride (GaN) vertical diodes and transistors are reviewed

with particular emphasis on avalanche ruggedness and repeatable avalanche operation

as well as the structural designs and performance characterizations that enable uniform avalanche under high electric fields. In parallel

based on the latest research progress

breakthrough developments in high avalanche tolerance of Ga

heterojunction power devices are summarized

highlighting the unique potential of UWBG materials for high-power and extreme-operating-condition applications. Finally

oriented toward practical engineering requirements

this pap

er discusses avalanche physics modeling based on material-device-circuit co-design

high-robustness termination structures and composite designs

system-level avalanche reliability under complex operating conditions

and the coupled electro-thermal evolution of avalanche failure mechanisms

providing guidance and references for the design

evaluation

and application of next-generation high-voltage

high-reliability power devices.

关键词

Keywords

references

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Research Progress on Avalanche Power Devices Based on GaN and Ga2O3 Semiconductors

DOI：10.12263/DZXB.20251072

摘要

Abstract

关键词

Keywords

references

Research Progress on Avalanche Power Devices Based on GaN and Ga₂O₃ Semiconductors