TRL-Based Modeling Method of Varactor Diodes for 3mm Millimeter-Wave Application

AN Da-wei; YU Wei-hua; LV Xin

doi:10.3969/j.issn.0372-2112.2012.06.019

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TRL-Based Modeling Method of Varactor Diodes for 3mm Millimeter-Wave Application

更新时间：2025-07-16

- TRL-Based Modeling Method of Varactor Diodes for 3mm Millimeter-Wave Application
- Acta Electronica Sinica Vol. 40, Issue 6, Pages: 1180-1184(2012)
- 作者机构：
  
  1. 中国气象局国家卫星气象中心,北京,100081
  2. 北京理工大学信息与电子学院,北京,100081
  3. 中国气象局国家卫星气象中心北京,100081
  4. 北京理工大学信息与电子学院北京,100081
- 作者简介：
- 基金信息：
- DOI：10.3969/j.issn.0372-2112.2012.06.019
  CLC：
- Published：2012
- 稿件说明：
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AN Da-wei, YU Wei-hua, LV Xin. TRL-Based Modeling Method of Varactor Diodes for 3mm Millimeter-Wave Application[J]. Acta Electronica Sinica, 2012, 40(6): 1180-1184.
DOI：

AN Da-wei, YU Wei-hua, LV Xin. TRL-Based Modeling Method of Varactor Diodes for 3mm Millimeter-Wave Application[J]. Acta Electronica Sinica, 2012, 40(6): 1180-1184. DOI： 10.3969/j.issn.0372-2112.2012.06.019.

摘要

本文在商用变容二极管的简化电路模型基础上

对非线性肖特基结和周围的无源结构进行了基于石英介质的TRL去嵌入建模分析

在考虑二极管无源区和封装环境各种寄生参量情况下

建立了精确的3mm波段二极管对电路模型.采用TRL算法

通过拟合初始二极管

参数曲线和TRL测试参数确定芯片电路模型中各集总参数元件数值.二极管对在片各项测试结果和基于改进的电路模型仿真结果相吻合.该二极管对电路模型建模方法可应用于毫米波亚毫米波混频倍频电路的准确分析与设计.

Abstract

Based on the simplified circuit model of the commercially available Varactor diode

TRL analysis on quartz is introduced in this paper for the analysis of the passive parts of the diode chip.The diodes chip model in 3mm is setup by the analysis of all the parasitic parameters and working environment.By using TRL arithmetic

the values of lumped elements in the diode chip model are determined.The measured on-wafer results agree well with simulated results of the diode chip.The methods of modified diodes chip model may find its applications in the design of millimeter circuits such as mixers and frequency multipliers.

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