YAO Chang-fei, ZHOU Ming, LUO Yun-sheng, et al. Development of Terahertz Frequency Solid State Multiply Sources and Sensors with Schottky Barrier Diodes[J]. Acta Electronica Sinica, 2013, 41(3): 438-443.
DOI:
YAO Chang-fei, ZHOU Ming, LUO Yun-sheng, et al. Development of Terahertz Frequency Solid State Multiply Sources and Sensors with Schottky Barrier Diodes[J]. Acta Electronica Sinica, 2013, 41(3): 438-443. DOI: 10.3969/j.issn.0372-2112.2013.03.004.
Development of Terahertz Frequency Solid State Multiply Sources and Sensors with Schottky Barrier Diodes
Terahertz solid state frequency multiplying sources and sensors are developed with GaAs Schottky barrier diodes and hybrid integrated circuit process.Based on physical structure of diode
high efficiency multipliers
and high sensitivity sensors
such as detectors and subharmonic mixers (SHM) are developed with the combination of electromagnetic (EM) full-wave tool and circuit simulation tool.To the 0.15THz detector
highest measured voltage sensitivity is 1600mV/mW
typical sensitivity is 600mV/mW in 0.11~0.17THz
and tangential signal sensitivity (TSS) is superior than -29dBm.To the 0.15THz frequency doubler
highest measured multiply efficiency is 7.5%
and typical efficiency is 6.0% in 0.1474~0.152THz.To the 0.18THz frequency doubler
highest measured multiply efficiency is 14.8%
and typical efficiency is 8.0% in 0.15~0.2THz.To the 0.15THz SHM
lowest measured conversion loss is 10.7dB
and typical conversion loss is 12.5dB in 0.135~0.165THz.To the 0.18THz SHM
lowest measured conversion loss is 5.8dB
and typical conversion loss is 13.5dB and 11.5dB in 0.165~0.2THz and 0.21~0.24THz